No. |
Part Name |
Description |
Manufacturer |
211 |
FP1A4M-T1B |
Hybrid transistor |
NEC |
212 |
FP1A4M-T2B |
Hybrid transistor |
NEC |
213 |
FP1F3P |
Hybrid transistor |
NEC |
214 |
FP1F3P-L |
Hybrid transistor |
NEC |
215 |
FP1F3P-T1B |
Hybrid transistor |
NEC |
216 |
FP1F3P-T2B |
Hybrid transistor |
NEC |
217 |
FP1J3P |
Hybrid transistor |
NEC |
218 |
FP1J3P-L |
Hybrid transistor |
NEC |
219 |
FP1J3P-T1B |
Hybrid transistor |
NEC |
220 |
FP1J3P-T2B |
Hybrid transistor |
NEC |
221 |
FP1L2Q |
Hybrid transistor |
NEC |
222 |
FP1L2Q-L |
Hybrid transistor |
NEC |
223 |
FP1L2Q-T1B |
Hybrid transistor |
NEC |
224 |
FP1L2Q-T2B |
Hybrid transistor |
NEC |
225 |
FP1L3N |
Hybrid transistor |
NEC |
226 |
FP1L3N-L |
Hybrid transistor |
NEC |
227 |
FP1L3N-T1B |
Hybrid transistor |
NEC |
228 |
FP1L3N-T2B |
Hybrid transistor |
NEC |
229 |
GP2015IGFP1R |
6-5V; GPS receiver RF front end. For C/A code global positioning by satellite receivers, time standards, navigation, surveying |
Mitel Semiconductor |
230 |
IRFP130 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
231 |
IRFP131 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
232 |
IRFP132 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
233 |
IRFP133 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
234 |
IRFP140 |
31A, 100V, 0.077 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
235 |
IRFP140 |
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
236 |
IRFP1405 |
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
237 |
IRFP1405PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
238 |
IRFP140A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
239 |
IRFP140N |
33A, 100V, 0.040 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
240 |
IRFP140N |
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
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