| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N3771 |
Silicon n-p-n high power transistor |
Mullard |
| 212 |
2N3771 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 213 |
2N3771 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 214 |
2N3771 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 215 |
2N3771 |
HIGH POWER NPN SILICON TRANSISTOR |
ST Microelectronics |
| 216 |
2N3771-D |
High Power NPN Silicon Power Transistors |
ON Semiconductor |
| 217 |
2N3772 |
HIGH POWER NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 218 |
2N3772 |
Silicon n-p-n high power transistor |
Mullard |
| 219 |
2N3772 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 220 |
2N3772 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 221 |
2N3772 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 222 |
2N3772 |
HIGH POWER NPN SILICON TRANSISTOR |
ST Microelectronics |
| 223 |
2N3773 |
High voltage, high power transistor. 160V, 150W. |
General Electric Solid State |
| 224 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 225 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 226 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
| 227 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
| 228 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
| 229 |
2N3846 |
NPN Silicon High Power Transistor (over 25 watts) |
Transitron Electronic |
| 230 |
2N3847 |
NPN Silicon High Power Transistor (over 25 watts) |
Transitron Electronic |
| 231 |
2N3848 |
NPN Silicon High Power Transistor (over 25 watts) |
Transitron Electronic |
| 232 |
2N3849 |
NPN Silicon High Power Transistor (over 25 watts) |
Transitron Electronic |
| 233 |
2N3996 |
NPN Silicon High Power Transistor (over 25 watts) |
Transitron Electronic |
| 234 |
2N3997 |
NPN Silicon High Power Transistor (over 25 watts) |
Transitron Electronic |
| 235 |
2N3998 |
NPN Silicon High Power Transistor (over 25 watts) |
Transitron Electronic |
| 236 |
2N3999 |
NPN Silicon High Power Transistor (over 25 watts) |
Transitron Electronic |
| 237 |
2N4276 |
Germanium High Power Transistors |
Diode Transistor Co Inc |
| 238 |
2N4347 |
High power industrial transistor |
Comset Semiconductors |
| 239 |
2N4347 |
Silicon n-p-n high power transistor |
Mullard |
| 240 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
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