| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 212 |
2SC2714 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier Applications |
TOSHIBA |
| 213 |
2SC2715 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
| 214 |
2SC2716 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 215 |
2SC2716 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 216 |
2SC2869 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
| 217 |
2SC2951 |
The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. |
Advanced Semiconductor |
| 218 |
2SC2952 |
The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. |
Advanced Semiconductor |
| 219 |
2SC2954-T1 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 220 |
2SC2954-T2 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 221 |
2SC2995 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications |
TOSHIBA |
| 222 |
2SC2996 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications |
TOSHIBA |
| 223 |
2SC3351-L |
For amplify low noise and high frequency. |
NEC |
| 224 |
2SC3351-T1B |
For amplify low noise and high frequency. |
NEC |
| 225 |
2SC3351-T2B |
For amplify low noise and high frequency. |
NEC |
| 226 |
2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 227 |
2SC3355-T |
For amplify low noise and high frequency |
NEC |
| 228 |
2SC3356-L |
For amplify low noise and high frequency |
NEC |
| 229 |
2SC3356-T1B |
For amplify low noise and high frequency |
NEC |
| 230 |
2SC3356-T2B |
For amplify low noise and high frequency |
NEC |
| 231 |
2SC3356-VM |
For amplify low noise and high frequency |
NEC |
| 232 |
2SC3357-T1 |
For amplify high frequency and low noise. |
NEC |
| 233 |
2SC3357-T2 |
For amplify high frequency and low noise. |
NEC |
| 234 |
2SC3652 |
SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER |
Hitachi Semiconductor |
| 235 |
2SC3663-L |
For amplify high frequency and low noise. |
NEC |
| 236 |
2SC3663-T1B |
For amplify high frequency and low noise. |
NEC |
| 237 |
2SC3663-T2B |
For amplify high frequency and low noise. |
NEC |
| 238 |
2SC3734 |
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 239 |
2SC3739 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 240 |
2SC3803 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications |
TOSHIBA |
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