No. |
Part Name |
Description |
Manufacturer |
211 |
F2224-39S |
Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics |
Hamamatsu Corporation |
212 |
G44 |
Package 44-Pin PQFP - physical dimensions |
Micro Linear |
213 |
G52 |
Package 52-Pin PQFP - physical dimensions |
Micro Linear |
214 |
H32 |
Package 32-Pin TQFP - physical dimensions |
Micro Linear |
215 |
H44 |
Package 44-Pin TQFP - physical dimensions |
Micro Linear |
216 |
H48 |
Package 48-Pin TQFP - physical dimensions |
Micro Linear |
217 |
H52 |
Package 52-Pin TQFP - physical dimensions |
Micro Linear |
218 |
H64 |
Package 64-Pin TQFP - physical dimensions |
Micro Linear |
219 |
HCS410 |
The HCS410 is a code hopping transponder device designed for secure entry systems. The HCS410 utilizes the patented KEELOQ® code hopping system and bi-directional challenge-and-response for logical and physical access control. High se |
Microchip |
220 |
HCS412 |
The HCS412 combines the patented KEELOQ® code hopping technology and bi-directional transponder challenge-and-response security into a single chip solution for logical and physical access control. High security learning mechanisms mak |
Microchip |
221 |
HCS473 |
The HCS473 combines the patented KEELOQ® code hopping technology and bi-directional transponder challenge-and-response security into a single chip solution for logical and physical access control. High security learning mechanisms mak |
Microchip |
222 |
HYS64-72V2200GU-8 |
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module |
Siemens |
223 |
HYS64-74V8200GU |
3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
Siemens |
224 |
HYS6472V16200GU |
3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules |
Siemens |
225 |
HYS6472V4200GU |
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module |
Siemens |
226 |
HYS64D128020GU-7-A |
DDR SDRAM Modules - 1GB (128Mx64) PC2100 2-bank |
Infineon |
227 |
HYS64D128020GU-8-A |
2.5 V 184-pin Unbuffered DDR-I SDRAM Modules |
Infineon |
228 |
HYS64D128021 |
200-Pin Small Outline Dual-In-Line Memory Modules |
Infineon |
229 |
HYS64D128021GBDL-5-B |
DDR SDRAM Modules - 1 GB (128Mx64) PC3200 2-bank |
Infineon |
230 |
HYS64D128021GBDL-6-B |
DDR SDRAM Modules - 1 GB (128Mx64) PC2700 2-bank |
Infineon |
231 |
HYS64D128021HBDL-5-B |
DDR SDRAM Modules - 1 GB (128Mx64) PC3200 2-bank |
Infineon |
232 |
HYS64D128021HBDL-6-B |
DDR SDRAM Modules - 1 GB (128Mx64) PC2700 2-bank |
Infineon |
233 |
HYS64D128320GU-5-B |
128MB - 1GB, 184pin |
Infineon |
234 |
HYS64D128320GU-6-A |
DDR SDRAM Modules - 1GB (128Mx64) PC2700 2-bank |
Infineon |
235 |
HYS64D128320GU-6-B |
128MB - 1GB, 184pin |
Infineon |
236 |
HYS64D128320HU-5-B |
DDR SDRAM Modules - 1GB (128Mx64) PC3200 2-bank |
Infineon |
237 |
HYS64D128320HU-6-B |
DDR SDRAM Modules - 1GB (128Mx64) PC2700 2-bank |
Infineon |
238 |
HYS64D16000 |
200-Pin Small Outline Dual-In-Line Memory Modules |
Infineon |
239 |
HYS64D16000GDL-6-B |
200-Pin Small Outline Dual-In-Line Memory Modules |
Infineon |
240 |
HYS64D16000GDL-6-C |
200-Pin Small Outline Dual-In-Line Memory Modules |
Infineon |
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