| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 212 |
2N6255 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 213 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 214 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 215 |
2N6304 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 216 |
2SA1977 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
NEC |
| 217 |
2SA1978 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
NEC |
| 218 |
2SC1193 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 219 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
| 220 |
2SC1236 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 221 |
2SC2148 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 222 |
2SC2149 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 223 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 224 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 225 |
2SC3356 |
MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) |
NEC |
| 226 |
2SC3582 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 227 |
2SC3582-T |
For amplify microwave and low noise. |
NEC |
| 228 |
2SC3583 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 229 |
2SC3583-L |
For amplify microwave and low noise. |
NEC |
| 230 |
2SC3583-T1B |
For amplify microwave and low noise. |
NEC |
| 231 |
2SC3583-T2B |
For amplify microwave and low noise. |
NEC |
| 232 |
2SC3585 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR |
NEC |
| 233 |
2SC3585-L |
For amplify microwave and low noise. |
NEC |
| 234 |
2SC3585-T1B |
For amplify microwave and low noise. |
NEC |
| 235 |
2SC3585-T2B |
For amplify microwave and low noise. |
NEC |
| 236 |
2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 237 |
2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 238 |
2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 239 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 240 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
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