| No. |
Part Name |
Description |
Manufacturer |
| 211 |
MCRF452 |
The MCRF45x family is a contactless read/write passive Radio Frequency Identification (RFID) IC device that is optimized for 13.56 MHz RF carrier signal. The device needs an external LC resonant circuit to communicate with interrogator wir |
Microchip |
| 212 |
MCRF455 |
The MCRF45x family is a contactless read/write passive Radio Frequency Identification (RFID) IC device that is optimized for 13.56 MHz RF carrier signal. The device needs an external LC resonant circuit to communicate with interrogator wir |
Microchip |
| 213 |
MRFIC0914 |
900 MHz PAGING POWER AMPLIFIER Si MONOLITHIC INTEGRATED CIRCUIT |
Motorola |
| 214 |
NJM2228 |
Video Sub-Carrier Signal Doubler/Tripler |
New Japan Radio |
| 215 |
NJM2228D |
VIDEO SUB-CARRIER SIGNAL DOUBLER/TRIPLER |
New Japan Radio |
| 216 |
NJM2228M |
VIDEO SUB-CARRIER SIGNAL DOUBLER/TRIPLER |
New Japan Radio |
| 217 |
NJM2228S |
VIDEO SUB-CARRIER SIGNAL DOUBLER/TRIPLER |
New Japan Radio |
| 218 |
NJM2238 |
Video Sub-Carrier Signal Tripler |
New Japan Radio |
| 219 |
NJM2238D |
VIDEO SUB-CARRIER SIGNAL TRIPLER |
New Japan Radio |
| 220 |
NJM2238M |
Video sub-carrier signal tripler |
New Japan Radio |
| 221 |
NJM2238S |
VIDEO SUB-CARRIER SIGNAL TRIPLER |
New Japan Radio |
| 222 |
NJM2240 |
Video Sub-Carrier Signal Quadrupler |
New Japan Radio |
| 223 |
NJM2240D |
VIDEO SUB-CARRIER SIGNAL QUADRUPLER |
New Japan Radio |
| 224 |
NJM2240M |
VIDEO SUB-CARRIER SIGNAL QUADRUPLER |
New Japan Radio |
| 225 |
NJM2240S |
VIDEO SUB-CARRIER SIGNAL QUADRUPLER |
New Japan Radio |
| 226 |
NTE5340 |
Silicon Bridge Rectifier Single-Phase, 40 Amp |
NTE Electronics |
| 227 |
NTE5342 |
Silicon Bridge Rectifier Single-Phase, 40 Amp |
NTE Electronics |
| 228 |
NTE5344 |
Silicon Bridge Rectifier Single-Phase, 40 Amp |
NTE Electronics |
| 229 |
NTE6087 |
Schottky Barrier Silicon Rectifier |
NTE Electronics |
| 230 |
RB751CS40 |
Schottky barrier single diodes |
NXP Semiconductors |
| 231 |
RB751S40 |
Schottky barrier single diodes |
NXP Semiconductors |
| 232 |
RB751V40 |
Schottky barrier single diodes |
NXP Semiconductors |
| 233 |
S15S3 |
Schottky Barrier Silicon Diode |
Shindengen |
| 234 |
S15S4 |
Schottky Barrier Silicon Diode |
Shindengen |
| 235 |
S30S3A |
Schottky Barrier Silicon Diode |
Shindengen |
| 236 |
S30S4A |
Schottky Barrier Silicon Diode |
Shindengen |
| 237 |
S5277B |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 238 |
S5277G |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 239 |
S5277J |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 240 |
S5277N |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| | | |
