No. |
Part Name |
Description |
Manufacturer |
211 |
2DI150Z-100 |
Power transistor module for high power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
212 |
2DI150Z-120 |
Power transistor module for high power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
213 |
2DI30D-050A |
Power transistor module for high power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
214 |
2DI30Z-120 |
Power transistor module for high power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
215 |
2DI50D-050A |
Power transistor module for high power switching, DC motor control applications |
COLLMER SEMICONDUCTOR INC |
216 |
2DI50Z-100 |
Power transistor module for high power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
217 |
2DI50Z-120 |
Power transistor module for high power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
218 |
2DI75D-050A |
Power transistor module for high power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
219 |
2N1906 |
Germanium Diffused Collector PNP, typical application High Power Amplifier |
SGS-ATES |
220 |
2N2095 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
221 |
2N2098 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
222 |
2N2708 |
NPN transistor RF/IF Amplifier, high power gain, low capacitance |
Amelco Semiconductor |
223 |
2N2962 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
224 |
2N2963 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
225 |
2N2964 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
226 |
2N2965 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
227 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
228 |
2N3055 |
Silicon n-p-n high power transistor |
Mullard |
229 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
230 |
2N3055U |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
231 |
2N3055V |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
232 |
2N3442 |
High power industrial transistor |
Comset Semiconductors |
233 |
2N3442 |
Silicon n-p-n high power transistor |
Mullard |
234 |
2N3442 |
Silicon HOMETAXIAL NPN transistor, high power, high voltage switch |
SGS-ATES |
235 |
2N3771 |
HIGH POWER NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
236 |
2N3771 |
Silicon n-p-n high power transistor |
Mullard |
237 |
2N3771 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
238 |
2N3771 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
239 |
2N3771 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
240 |
2N3771 |
HIGH POWER NPN SILICON TRANSISTOR |
ST Microelectronics |
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