| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N5908 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 212 |
2N5909 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 213 |
2N5911 |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 214 |
2N5911_D |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 215 |
2N5911_W |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 216 |
2N5912 |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 217 |
2N5912_D |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 218 |
2N5912_W |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 219 |
2N6483 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 220 |
2N6484 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 221 |
2N6485 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 222 |
2N6618 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
| 223 |
2N6618 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
| 224 |
2N6679 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
| 225 |
2N6679 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
| 226 |
2N6796 |
8A/ 100V/ 0.180 Ohm/ N-Channel Power MOSFET |
Intersil |
| 227 |
2N6962 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 30A, Parametric limits in accordance with MIL-S-19500/568 where applicable |
Siliconix |
| 228 |
2N6975 |
5A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 229 |
2N6976 |
5A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 230 |
2N6977 |
5A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 231 |
2N6978 |
5A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 232 |
2N7288D |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
| 233 |
2N7288H |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
| 234 |
2N7288R |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
| 235 |
3N161 |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
Intersil |
| 236 |
3N163 |
P-channel enchancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| 237 |
3N164 |
P-channel enchancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| 238 |
3N165 |
Monolithic dual P-channel enchancement mode MOSFET general purpose amplifier. |
Intersil |
| 239 |
3N166 |
Monolithic dual P-channel enchancement mode MOSFET general purpose amplifier. |
Intersil |
| 240 |
3N170 |
N-channel enchancement mode MOSFET switch. |
Intersil |
| | | |
