No. |
Part Name |
Description |
Manufacturer |
211 |
BTW69-1200N |
50 A - 1200 V non-insulated SCR thyristor |
ST Microelectronics |
212 |
BUK854-800A |
Insulated Gate Bipolar Transistor IGBT |
Philips |
213 |
BUK856-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
Philips |
214 |
BUK856-800 |
Insulated Gate Bipolar Transistor IGBT |
Philips |
215 |
BUK856-800A |
Insulated Gate Bipolar Transistor IGBT |
Philips |
216 |
BUK866-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
Philips |
217 |
C1658 |
Approved for use with Conexant ADSL Chip Set Meets requirements of IEC950 for supplementary insulation, 250V working voltage |
CoEv Inc |
218 |
C1676 |
Approved for use with GlobeSpan HDSL2 Chip Set Meets the requirements of IEC60950 for supplementary insulation, 250V working voltage |
CoEv Inc |
219 |
C2042 |
Analog Devices AD20MSP930 CPE Line Transformer Meet requirements of IEC60950 for supplementary insulation, 250V working voltage |
CoEv Inc |
220 |
C67070-A2107-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
221 |
C67070-A2120-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
222 |
C67070-A2300-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
223 |
C67070-A2301-A70 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
224 |
C67070-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
225 |
C67070-A2701-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
226 |
C67070-A2702-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
227 |
C67070-A2703-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
228 |
C67070-A2704-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
229 |
C67076-A2009-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
230 |
C67076-A2010-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
231 |
C67076-A2105-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
232 |
C67076-A2106-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
233 |
C67076-A2107-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
234 |
C67076-A2108-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
235 |
C67076-A2109-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
236 |
CM1000HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
237 |
CM1000HA-28H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
238 |
CM100BU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
239 |
CM100DU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
240 |
CM100DU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
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