| No. |
Part Name |
Description |
Manufacturer |
| 211 |
IRF9630S |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 212 |
IRF9630STRL |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 213 |
IRF9630STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 214 |
IRF9631 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 215 |
IRF9631 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 6.5A |
Siliconix |
| 216 |
IRF9632 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 217 |
IRF9632 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 5.5A |
Siliconix |
| 218 |
IRF9633 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 219 |
IRF9633 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 5.5A |
Siliconix |
| 220 |
IRF9640 |
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
| 221 |
IRF9640 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 222 |
IRF9640 |
11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 223 |
IRF9640 |
Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 224 |
IRF9640 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 225 |
IRF9640L |
Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 226 |
IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 227 |
IRF9640S |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 228 |
IRF9640SPBF |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 229 |
IRF9640STRL |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 230 |
IRF9640STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 231 |
IRF9640STRR |
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R |
New Jersey Semiconductor |
| 232 |
IRF9641 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 233 |
IRF9642 |
Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 234 |
IRF9642 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 235 |
IRF9643 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 236 |
IRF9910 |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 237 |
IRF9910PBF |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 238 |
IRF9910PBF-1 |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 239 |
IRF9910TR |
Leaded 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 240 |
IRF9910TRPBF-1 |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| | | |
