| No. |
Part Name |
Description |
Manufacturer |
| 211 |
NSDU51 |
PNP Silicon Audio Power Transistor 10W |
National Semiconductor |
| 212 |
NSDU51A |
PNP Silicon Audio Power Transistor 10W |
National Semiconductor |
| 213 |
NSE170 |
PNP Silicon Power Transistor 10W |
National Semiconductor |
| 214 |
NSE171 |
PNP Silicon Power Transistor 10W |
National Semiconductor |
| 215 |
NSE180 |
NPN Silicon Power Transistor 10W |
National Semiconductor |
| 216 |
NSE181 |
NPN Silicon Power Transistor 10W |
National Semiconductor |
| 217 |
PT8811 |
RF Power Transistor 10W 12.5V 470MHz |
TRW |
| 218 |
PT8811A |
UHF Power Transistor 10W 12.5V gold metallization |
Motorola |
| 219 |
PT8828F |
RF Transistor 10W 12.5V 175MHz NPN Silicon |
TRW |
| 220 |
PT9780 |
SSB Power RF Transistor 100W PEP 28V 2-30MHz 14dB |
Motorola |
| 221 |
PT9780 |
SSB Power Transistor 100W 28V |
TRW |
| 222 |
PT9785 |
SSB Power RF Transistor 100W PEP 13.5V 2-30MHz 13dB |
Motorola |
| 223 |
PT9785 |
SSB Power Transistor 100W 13.5V |
TRW |
| 224 |
PTF080101 |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon |
| 225 |
PTF080101S |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon |
| 226 |
PTF180101 |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
| 227 |
PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
| 228 |
RCA TA8348 |
10A NPN Darlington Power Transistor 100W - Old RCA part name for 2N6385 |
RCA Solid State |
| 229 |
RCA TA8349 |
10A NPN Darlington Power Transistor 100W - Old RCA part name for 2N6383 |
RCA Solid State |
| 230 |
RCA TA8486 |
10A NPN Darlington Power Transistor 100W - Old RCA part name for 2N6384 |
RCA Solid State |
| 231 |
SF1000EX22 |
Silicon alloy-diffused junction thyristor 1000A 2500V flat package |
TOSHIBA |
| 232 |
SF10B12 |
Silicon alloy-diffused junction thyristor 10A 100V |
TOSHIBA |
| 233 |
SF10D12 |
Silicon alloy-diffused junction thyristor 10A 200V |
TOSHIBA |
| 234 |
SF10F12 |
Silicon alloy-diffused junction thyristor 10A 300V |
TOSHIBA |
| 235 |
SF10G12 |
Silicon alloy-diffused junction thyristor 10A 400V |
TOSHIBA |
| 236 |
SF10J12 |
Silicon alloy-diffused junction thyristor 10A 600V |
TOSHIBA |
| 237 |
SF10L12 |
Silicon alloy-diffused junction thyristor 10A 800V |
TOSHIBA |
| 238 |
SF10N12 |
Silicon alloy-diffused junction thyristor 10A 1000V |
TOSHIBA |
| 239 |
SH80D11 |
Silicon alloy-diffused junction high speed thyristor 100A 200V |
TOSHIBA |
| 240 |
SH80F11 |
Silicon alloy-diffused junction high speed thyristor 100A 300V |
TOSHIBA |
| | | |
