No. |
Part Name |
Description |
Manufacturer |
211 |
GS71116AJ-10 |
10ns 64K x 16 1Mb asynchronous SRAM |
GSI Technology |
212 |
GS71116AJ-10I |
10ns 64K x 16 1Mb asynchronous SRAM |
GSI Technology |
213 |
GS71116J-10 |
10ns 64K x 16 1Mb asynchronous SRAM |
GSI Technology |
214 |
GS71116J-10I |
10ns 64K x 16 1Mb asynchronous SRAM |
GSI Technology |
215 |
GS72108AJ-10 |
10ns 256K x 8 2Mb asynchronous SRAM |
GSI Technology |
216 |
GS72108AJ-10I |
10ns 256K x 8 2Mb asynchronous SRAM |
GSI Technology |
217 |
GS72108J-10 |
256K x 8 2Mb Asynchronous SRAM |
GSI Technology |
218 |
GS72108J-10I |
256K x 8 2Mb Asynchronous SRAM |
GSI Technology |
219 |
GS72116AJ-10 |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
220 |
GS72116AJ-10I |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
221 |
GS72116J-10 |
10ns 128K x 16 2Mb asynchronous SRAM |
GSI Technology |
222 |
GS72116J-10I |
10ns 128K x 16 2Mb asynchronous SRAM |
GSI Technology |
223 |
GS74104AJ-10 |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
224 |
GS74104AJ-10I |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
225 |
GS74104J-10 |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
226 |
GS74104J-10I |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
227 |
GS74108AJ-10 |
10ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
228 |
GS74108AJ-10I |
10ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
229 |
GS74108J-10 |
512K x 8 4Mb Asynchronous SRAM |
GSI Technology |
230 |
GS74108J-10I |
512K x 8 4Mb Asynchronous SRAM |
GSI Technology |
231 |
GS74116AJ-10 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
232 |
GS74116AJ-10I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
233 |
GS74116AJ-10IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
234 |
GS74116AJ-10T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
235 |
GS74116J-10 |
10ns 256K x 16 4Mb asynchronous SRAM |
GSI Technology |
236 |
GS74116J-10I |
10ns 256K x 16 4Mb asynchronous SRAM |
GSI Technology |
237 |
HLS-JJ-10 |
Coaxial Line Stretchers |
Hirose Electric |
238 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
239 |
HM514260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
240 |
HM51S4260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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