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Datasheets for J-10

Datasheets found :: 424
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No. Part Name Description Manufacturer
211 GS71116AJ-10 10ns 64K x 16 1Mb asynchronous SRAM GSI Technology
212 GS71116AJ-10I 10ns 64K x 16 1Mb asynchronous SRAM GSI Technology
213 GS71116J-10 10ns 64K x 16 1Mb asynchronous SRAM GSI Technology
214 GS71116J-10I 10ns 64K x 16 1Mb asynchronous SRAM GSI Technology
215 GS72108AJ-10 10ns 256K x 8 2Mb asynchronous SRAM GSI Technology
216 GS72108AJ-10I 10ns 256K x 8 2Mb asynchronous SRAM GSI Technology
217 GS72108J-10 256K x 8 2Mb Asynchronous SRAM GSI Technology
218 GS72108J-10I 256K x 8 2Mb Asynchronous SRAM GSI Technology
219 GS72116AJ-10 128K x 16 2Mb Asynchronous SRAM GSI Technology
220 GS72116AJ-10I 128K x 16 2Mb Asynchronous SRAM GSI Technology
221 GS72116J-10 10ns 128K x 16 2Mb asynchronous SRAM GSI Technology
222 GS72116J-10I 10ns 128K x 16 2Mb asynchronous SRAM GSI Technology
223 GS74104AJ-10 10ns 1M x 4 4Mb asynchronous SRAM GSI Technology
224 GS74104AJ-10I 10ns 1M x 4 4Mb asynchronous SRAM GSI Technology
225 GS74104J-10 10ns 1M x 4 4Mb asynchronous SRAM GSI Technology
226 GS74104J-10I 10ns 1M x 4 4Mb asynchronous SRAM GSI Technology
227 GS74108AJ-10 10ns 512K x 8 4Mb asynchronous SRAM GSI Technology
228 GS74108AJ-10I 10ns 512K x 8 4Mb asynchronous SRAM GSI Technology
229 GS74108J-10 512K x 8 4Mb Asynchronous SRAM GSI Technology
230 GS74108J-10I 512K x 8 4Mb Asynchronous SRAM GSI Technology
231 GS74116AJ-10 256K x 16 4Mb Asynchronous SRAM GSI Technology
232 GS74116AJ-10I 256K x 16 4Mb Asynchronous SRAM GSI Technology
233 GS74116AJ-10IT 256K x 16 4Mb Asynchronous SRAM GSI Technology
234 GS74116AJ-10T 256K x 16 4Mb Asynchronous SRAM GSI Technology
235 GS74116J-10 10ns 256K x 16 4Mb asynchronous SRAM GSI Technology
236 GS74116J-10I 10ns 256K x 16 4Mb asynchronous SRAM GSI Technology
237 HLS-JJ-10 Coaxial Line Stretchers Hirose Electric
238 HM514260AJ-10 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
239 HM514260ALJ-10 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
240 HM51S4260AJ-10 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor


Datasheets found :: 424
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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