No. |
Part Name |
Description |
Manufacturer |
211 |
MJD127T4 |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
ST Microelectronics |
212 |
MJD127TF |
PNP Silicon Darlington Transistor |
Fairchild Semiconductor |
213 |
MJD128 |
PNP Darlington Power Transistor |
ON Semiconductor |
214 |
MJD13003-D |
High Voltage SWITCHMODE Series DPAK For Surface Mount Applications |
ON Semiconductor |
215 |
MJD148 |
NPN Silicon Power Transistor |
ON Semiconductor |
216 |
MJD148-D |
NPN Silicon Power Transistor DPAK For Surface Mount Applications |
ON Semiconductor |
217 |
MJD148T4 |
NPN Silicon Power Transistor |
ON Semiconductor |
218 |
MJD18002D2 |
Bipolar NPN Transistor |
ON Semiconductor |
219 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
220 |
NJD1718 |
Power Transistors, PNP Silicon DPAK For Surface Mount |
ON Semiconductor |
221 |
NTJD1155L |
Power MOSFET 8 V, ±1.3 A, High Side Load Switch with Level-Shift P-Channel, SC-88 |
ON Semiconductor |
222 |
PJD1616ACT |
120V; 1A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
223 |
PJD1616ACX |
120V; 1A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
224 |
PJD1616CCT |
120V; 0.5A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
225 |
PJD1616CCX |
120V; 0.5A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
226 |
TMS320C6211JD100 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
227 |
TMS320C6211JD120 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
228 |
TMS320C6211JD150 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
229 |
TMS320C6211JD167 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
230 |
TMS320C6711JD100 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
231 |
TMS320C6711JD120 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
232 |
TMS320C6711JD150 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
233 |
TMS320C6711JD167 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
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