No. |
Part Name |
Description |
Manufacturer |
211 |
2N5209 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
212 |
2N5210 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
213 |
2N5905 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
214 |
2N5906 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
215 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
216 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
217 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
218 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
219 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
220 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
221 |
2N929 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
222 |
2N929A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
223 |
2N930 |
Low level, low noise NPN transistor |
ICCE |
224 |
2N930 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
225 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
226 |
2SA1193 |
Silicon PNP Epitaxial, Darlington |
Hitachi Semiconductor |
227 |
2SA1193K |
Silicon PNP Epitaxial, Darlington |
Hitachi Semiconductor |
228 |
2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. |
TOSHIBA |
229 |
2SB1048 |
Silicon PNP Epitaxial, Darlington |
Hitachi Semiconductor |
230 |
2SC1472 |
Silicon NPN Epitaxial, Darlington |
Hitachi Semiconductor |
231 |
2SC1472K |
Silicon NPN Epitaxial, Darlington |
Hitachi Semiconductor |
232 |
2SC2996 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications |
TOSHIBA |
233 |
2SC3957 |
Silicon NPN Epitaxial, Darlington |
Hitachi Semiconductor |
234 |
2SD1209 |
Silicon NPN Epitaxial, Darlington |
Hitachi Semiconductor |
235 |
2SD1209K |
Silicon NPN Epitaxial, Darlington |
Hitachi Semiconductor |
236 |
2SD1470 |
Silicon NPN Epitaxial, Darlington |
Hitachi Semiconductor |
237 |
2SD1472 |
Silicon NPN Epitaxial, Darlington |
Hitachi Semiconductor |
238 |
2SD1978 |
Silicon NPN Epitaxial, Darlington |
Hitachi Semiconductor |
239 |
2SD2046 |
Silicon NPN Epitaxial, Darlington |
Hitachi Semiconductor |
240 |
2SD2213 |
Silicon NPN Epitaxial, Darlington |
Hitachi Semiconductor |
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