| No. |
Part Name |
Description |
Manufacturer |
| 211 |
IS62LV256L-20T |
20ns; 3.3V; 32K x 8 low voltage static RAM |
ICSI |
| 212 |
IS62LV256L-20T |
32K x 8 LOW VOLTAGE CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 213 |
IS62LV256L-20TI |
20ns; 3.3V; 32K x 8 low voltage static RAM |
ICSI |
| 214 |
IS62LV256L-20TI |
32K x 8 LOW VOLTAGE CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 215 |
IS62U6416LL-20B |
64K x 16 low voltage, ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 216 |
IS62U6416LL-20BI |
64K x 16 low voltage, ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 217 |
IS62U6416LL-20K |
64K x 16 low voltage, ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 218 |
IS62U6416LL-20KI |
64K x 16 low voltage, ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 219 |
IS62U6416LL-20T |
64K x 16 low voltage, ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 220 |
IS62U6416LL-20TI |
64K x 16 low voltage, ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 221 |
KEL-209A |
High-Power GaAlAs IRED Mounted |
Kodenshi Corp |
| 222 |
KEL-209A |
High-Power GaAlAs IRED Mounted |
Kondenshi Corp |
| 223 |
KM681002CL-20 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 224 |
L-204ED |
1.8 mm dia tower type LED lamp, hi effi red |
PARA Light |
| 225 |
L-204GD |
1.8 mm dia tower type LED lamp, green |
PARA Light |
| 226 |
L-204HD |
1.8 mm dia tower type LED lamp, red |
PARA Light |
| 227 |
L-204SRD |
1.8 mm dia tower type LED lamp, super red |
PARA Light |
| 228 |
L-204YD |
1.8 mm dia tower type LED lamp, yellow |
PARA Light |
| 229 |
M27256L-20 |
256K (32 x 8) UV erasable PROM, 200ns |
Intel |
| 230 |
NE345L-20B |
0.1-4.0 GHz, 20 W, L,S-band power GaAs MESFET |
NEC |
| 231 |
P4C164L-20DM |
20 ns,static CMOS RAM, 8 K x 8 ultra high speed |
Performance Semiconductor Corporation |
| 232 |
P4C164L-20DWM |
20 ns,static CMOS RAM, 8 K x 8 ultra high speed |
Performance Semiconductor Corporation |
| 233 |
P4C164L-20FM |
20 ns,static CMOS RAM, 8 K x 8 ultra high speed |
Performance Semiconductor Corporation |
| 234 |
P4C164L-20LM |
20 ns,static CMOS RAM, 8 K x 8 ultra high speed |
Performance Semiconductor Corporation |
| 235 |
P4C187L-20DM |
20 ns,static CMOS RAM, 64 K x 1 ultra high speed |
Performance Semiconductor Corporation |
| 236 |
P4C187L-20LM |
20 ns,static CMOS RAM, 64 K x 1 ultra high speed |
Performance Semiconductor Corporation |
| 237 |
P4C188L-20DM |
20 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 238 |
P4C188L-20LM |
20 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 239 |
P4C1981L-20DM |
20 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 240 |
P4C1981L-20DMB |
20 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
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