No. |
Part Name |
Description |
Manufacturer |
211 |
ASY28 |
Germanium NPN switching transistor |
TELEFUNKEN |
212 |
ASY29 |
Germanium NPN switching transistor. Complementary to ASY27 |
AEG-TELEFUNKEN |
213 |
ASY29 |
Germanium NPN switching transistor |
TELEFUNKEN |
214 |
ASY30 |
Germanium PNP junction switching transistor |
TELEFUNKEN |
215 |
ATMEGA162-16AI |
8-Bit AVR Microcontroller with 16K Bytes In-System ProgrammableFlash |
Atmel |
216 |
ATMEGA162-16MI |
8-Bit AVR Microcontroller with 16K Bytes In-System ProgrammableFlash |
Atmel |
217 |
ATMEGA162-16PI |
8-Bit AVR Microcontroller with 16K Bytes In-System ProgrammableFlash |
Atmel |
218 |
ATMEGA162V-8AI |
8-Bit AVR Microcontroller with 16K Bytes In-System ProgrammableFlash |
Atmel |
219 |
ATMEGA162V-8MI |
8-Bit AVR Microcontroller with 16K Bytes In-System ProgrammableFlash |
Atmel |
220 |
ATMEGA162V-8PI |
8-Bit AVR Microcontroller with 16K Bytes In-System ProgrammableFlash |
Atmel |
221 |
AUY28 |
Germanium PNP transistor for power switching. |
AEG-TELEFUNKEN |
222 |
AUY28 |
Germanium PNP junction power switching transistor |
TELEFUNKEN |
223 |
AUZ11 |
Germanium PNP junction power switching transistor |
TELEFUNKEN |
224 |
AUZ11D |
Germanium PNP junction power switching transistor |
TELEFUNKEN |
225 |
BAW24 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
226 |
BAW25 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
227 |
BAW26 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
228 |
BAW27 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
229 |
BAX20 |
Silicon epitaxial planar general purpose diodes |
AEG-TELEFUNKEN |
230 |
BAX21 |
Silicon epitaxial planar general purpose diodes |
AEG-TELEFUNKEN |
231 |
BAX25 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
232 |
BAX26 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
233 |
BAX27 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
234 |
BAY67 |
Diffused silicon diode, adapted to switch RF signals |
AEG-TELEFUNKEN |
235 |
BAY68 |
Silicon epitaxial planar diodes for fast switching applications |
AEG-TELEFUNKEN |
236 |
BAY69 |
Silicon epitaxial planar diodes for fast switching applications |
AEG-TELEFUNKEN |
237 |
BAY78 |
Silicon epitaxial planar diodes quad for wing modulators and bridge circuits |
AEG-TELEFUNKEN |
238 |
BAY86 |
Diffused silicon general purpose diode |
AEG-TELEFUNKEN |
239 |
BAY87 |
Diffused silicon general purpose diode |
AEG-TELEFUNKEN |
240 |
BAY88 |
Diffused silicon general purpose diode |
AEG-TELEFUNKEN |
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