| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BD236 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 212 |
BD237 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 213 |
BD238 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 214 |
BD301 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 215 |
BD302 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 216 |
BD303 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 217 |
BD304 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 218 |
BD433 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 219 |
BD434 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 220 |
BD435 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 221 |
BD436 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 222 |
BDY80 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 223 |
BDY81 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 224 |
BDY82 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 225 |
BDY83 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 226 |
BFQ34T |
Silicon planar epitaxial NPN transistor, intended for wideband amplification applications |
Philips |
| 227 |
BFW45 |
Video Amplification NPN Transistor |
CCSIT-CE |
| 228 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 229 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 230 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 231 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 232 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 233 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 234 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 235 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 236 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 237 |
BGY14E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 238 |
BGY14FA1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 239 |
BGY26D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 240 |
BGY26E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
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