| No. |
Part Name |
Description |
Manufacturer |
| 211 |
269-D-280-M-14XX-B |
DFB, multimode pump laser module. Stable wavelength perfoprmance within the 1420 nm to 1510 nm (wavelength 14xx). Operating power 280 mW. Isolated, PMF. Connector SC/APC. |
Agere Systems |
| 212 |
269-D-280-M-14XX-C |
DFB, multimode pump laser module. Stable wavelength perfoprmance within the 1420 nm to 1510 nm (wavelength 14xx). Operating power 280 mW. Isolated, PMF. Connector FC/APC. |
Agere Systems |
| 213 |
28C256AJM-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 214 |
28C256AJM-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 215 |
28C256APM-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 216 |
28C256APM-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 217 |
28C256ASM-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 218 |
28C256ASM-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 219 |
28C256ATM-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 220 |
28C256ATM-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 221 |
29C010JM-1 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
| 222 |
29C010JM-1 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. |
Turbo IC |
| 223 |
29C010PM-1 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
| 224 |
29C010PM-1 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. |
Turbo IC |
| 225 |
29C010TM-1 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
| 226 |
29C010TM-1 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. |
Turbo IC |
| 227 |
29C021JM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 228 |
29C021JM-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 229 |
29C021PM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 230 |
29C021PM-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 231 |
29C021TM-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 232 |
29C021TM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 233 |
2D-2000M-1 |
2 GHz Band Power Dividers/Combiners |
Hirose Electric |
| 234 |
2DI150M-120 |
Power Transistor Module |
Fuji Electric |
| 235 |
3C-2000M-1 |
2 GHz Band Power Dividers/Combiners |
Hirose Electric |
| 236 |
3D3215M-1.5 |
Delay 1.5 +/-0.7 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
| 237 |
3D3215M-10 |
Delay 10 +/-1.5 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
| 238 |
3D3215M-12 |
Delay 12 +/-1.5 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
| 239 |
3D3215M-15 |
Delay 15 +/-1.5 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
| 240 |
3D7105M-1 |
Delay 1 +/-0.5 ns, monolithic 5-TAP fixed delay line |
Data Delay Devices Inc |
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