No. |
Part Name |
Description |
Manufacturer |
211 |
GS88132B |
9Mb Burst SRAMs |
GSI Technology |
212 |
GS88136A |
9Mb Burst SRAMs |
GSI Technology |
213 |
GS88136B |
9Mb Burst SRAMs |
GSI Technology |
214 |
GS881E18A |
9Mb Burst SRAMs |
GSI Technology |
215 |
GS881E18B |
9Mb Burst SRAMs |
GSI Technology |
216 |
GS881E32A |
9Mb Burst SRAMs |
GSI Technology |
217 |
GS881E32B |
9Mb Burst SRAMs |
GSI Technology |
218 |
GS881E36A |
9Mb Burst SRAMs |
GSI Technology |
219 |
GS881E36B |
9Mb Burst SRAMs |
GSI Technology |
220 |
GS88218A |
9Mb Burst SRAMs |
GSI Technology |
221 |
GS88218B |
9Mb Burst SRAMs |
GSI Technology |
222 |
GS88236A |
9Mb Burst SRAMs |
GSI Technology |
223 |
GS88236B |
9Mb Burst SRAMs |
GSI Technology |
224 |
GS88237B |
9Mb Burst SRAMs |
GSI Technology |
225 |
GS882V18B |
9Mb Burst SRAMs |
GSI Technology |
226 |
GS882V36B |
9Mb Burst SRAMs |
GSI Technology |
227 |
GS882V37A |
9Mb Burst SRAMs |
GSI Technology |
228 |
GS882V37B |
9Mb Burst SRAMs |
GSI Technology |
229 |
HB56SW3272ESK |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) |
Hitachi Semiconductor |
230 |
HB56SW3272ESK-5 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) |
Hitachi Semiconductor |
231 |
HB56SW3272ESK-6 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) |
Hitachi Semiconductor |
232 |
HYMD564646BXX |
184 Pin Unbuffered DDR SDRAM DIMMs Based on 512Mb B ver |
Hynix Semiconductor |
233 |
K4H510438 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
234 |
K4H510438B-GC/LA2 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
235 |
K4H510438B-GC/LB0 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
236 |
K4H510438B-GC/LB3 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
237 |
K4H510438B-GC/LCC |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
238 |
K4H510438B-TC/LA2 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
239 |
K4H510438B-TC/LB0 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
240 |
K4H510438B-TC/LB3 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
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