| No. |
Part Name |
Description |
Manufacturer |
| 211 |
CY7C1526V18-200BZC |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 200 MHz. |
Cypress |
| 212 |
CY7C1526V18-250BZC |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 250 MHz. |
Cypress |
| 213 |
CY7C53120LB-32SI |
3.3 V Neuron chip network processor. Flash 8 KB, ROM 16 KB, SRAM 4 KB. Max.input clock 20 MHz. |
Cypress |
| 214 |
CY7C53120LB-44AI |
3.3 V Neuron chip network processor. Flash 8 KB, ROM 16 KB, SRAM 4 KB. Max.input clock 20 MHz. |
Cypress |
| 215 |
CYNSE70128-66BGI |
Network search engine. Frequency 66 MHz. I/O voltage 2.5V/3.3V. |
Cypress |
| 216 |
CYNSE70128-83BGI |
Network search engine. Frequency 83 MHz. I/O voltage 2.5V/3.3V. |
Cypress |
| 217 |
ISL5727IN |
Dual 10-bit, 3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz. |
Intersil |
| 218 |
ISL5757IA |
Dual 10-bit, 3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz. |
Intersil |
| 219 |
ISL5757IB |
Dual 10-bit, 3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz. |
Intersil |
| 220 |
ISL5761IAZ |
10-bit, +3.3V, 130+MSPS, high speed D/A converter. Clock speed 130 MHz. |
Intersil |
| 221 |
ISL5761IBZ |
10-bit, +3.3V, 130+MSPS, high speed D/A converter. Clock speed 130 MHz. |
Intersil |
| 222 |
ISL5761_2IAZ |
10-bit, +3.3V, 210+MSPS, high speed D/A converter. Clock speed 210 MHz. |
Intersil |
| 223 |
ISL5761_2IBZ |
10-bit, +3.3V, 210+MSPS, high speed D/A converter. Clock speed 210 MHz. |
Intersil |
| 224 |
ISL5827IN |
Dual 12-bit, +3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz. |
Intersil |
| 225 |
ISL5857IA |
12-bit, +3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz. |
Intersil |
| 226 |
ISL5857IB |
12-bit, +3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz. |
Intersil |
| 227 |
ISL5927IN |
Dual 14-bit, +3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz. |
Intersil |
| 228 |
ISL5957IA |
14-bit, +3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz. |
Intersil |
| 229 |
ISL5957IB |
14-bit, +3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz. |
Intersil |
| 230 |
K2011 |
IF filter for intercarrier application (IF= 38.0 MHz. standard B/G-CCIR, D/K-OIRT) |
etc |
| 231 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 232 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 233 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 234 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
| 235 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 236 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 237 |
K4R271669B-MCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
| 238 |
K4R271669B-MCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
| 239 |
K4R271669B-MCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
| 240 |
K4R271669B-NCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
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