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Datasheets for MPERATURE D

Datasheets found :: 244
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No. Part Name Description Manufacturer
211 TC7117RCLW 3-1/2 digit analog-to-digital converter with hold. Directly drive LED display. Low temperature drift internal reference 80 ppm/degC. TelCom Semiconductor
212 TC7117RCPL 3-1/2 digit analog-to-digital converter with hold. Directly drive LED display. Low temperature drift internal reference 80 ppm/degC. TelCom Semiconductor
213 TC7117RIJL 3-1/2 digit analog-to-digital converter with hold. Directly drive LED display. Low temperature drift internal reference 80 ppm/degC. TelCom Semiconductor
214 TC7126ARCKW 3-1/2 digit analog-to-digital converter with hold. Low temperature drift internal reference 35 ppm/degC. TelCom Semiconductor
215 TC7126ARCLW 3-1/2 digit analog-to-digital converter with hold. Low temperature drift internal reference 35 ppm/degC. TelCom Semiconductor
216 TC7126ARCPL 3-1/2 digit analog-to-digital converter with hold. Low temperature drift internal reference 35 ppm/degC. TelCom Semiconductor
217 TC7126RCKW 3-1/2 digit analog-to-digital converter with hold. Low temperature drift internal reference 80 ppm/degC. TelCom Semiconductor
218 TC7126RCLW 3-1/2 digit analog-to-digital converter with hold. Low temperature drift internal reference 80 ppm/degC. TelCom Semiconductor
219 TC7126RCPL 3-1/2 digit analog-to-digital converter with hold. Low temperature drift internal reference 80 ppm/degC. TelCom Semiconductor
220 TC7126RIPL 3-1/2 digit analog-to-digital converter with hold. Low temperature drift internal reference 80 ppm/degC. TelCom Semiconductor
221 TC7136ARCKW Low power, 3-1/2 digit analog-to-digital converter. Low temperature drift internal reference 35ppm/degC,typ. TelCom Semiconductor
222 TC7136ARCLW Low power, 3-1/2 digit analog-to-digital converter. Low temperature drift internal reference 35ppm/degC,typ. TelCom Semiconductor
223 TC7136ARCPL Low power, 3-1/2 digit analog-to-digital converter. Low temperature drift internal reference 35ppm/degC,typ. TelCom Semiconductor
224 TC7136RCKW Low power, 3-1/2 digit analog-to-digital converter. Low temperature drift internal reference 70ppm/degC,typ. TelCom Semiconductor
225 TC7136RCLW Low power, 3-1/2 digit analog-to-digital converter. Low temperature drift internal reference 70ppm/degC,typ. TelCom Semiconductor
226 TC7136RCPL Low power, 3-1/2 digit analog-to-digital converter. Low temperature drift internal reference 70ppm/degC,typ. TelCom Semiconductor
227 TC74 The TC74 is a serially accessible digital temperature sensor particularly suited for low cost and small form-factor applications. Temperature data is converted from the on-board thermal sensing element and made available as an 8-bit digita Microchip
228 TC77 The TC77 is a serially accessible digital temperature sensor particularly suited for low cost and small form-factor applications. Temperature data is converted from the on-board thermal sensing element and made available at anytime as a 13 Microchip
229 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
230 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
231 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
232 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
233 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
234 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
235 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
236 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
237 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
238 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
239 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
240 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 244
Page: | 4 | 5 | 6 | 7 | 8 | 9 |



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