| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SB948A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 212 |
2SB949 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 213 |
2SB949A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 214 |
2SB950 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 215 |
2SB950A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 216 |
2SB951 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 217 |
2SB951A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 218 |
2SB952 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 219 |
2SB952A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 220 |
2SB953 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 221 |
2SB953A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 222 |
2SB954 |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 223 |
2SB954A |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 224 |
2SB967 |
Silicon PNP epitaxial planar type(For low-frequency power amplification) |
Panasonic |
| 225 |
2SB968 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 226 |
2SC1622A-L |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 227 |
2SC1622A-T1B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 228 |
2SC1622A-T2B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 229 |
2SC1688 |
For high-frequency amplification |
Panasonic |
| 230 |
2SC2412KT146 |
NPN General Purpose Amplification Transistor |
ROHM |
| 231 |
2SC2671 |
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
Panasonic |
| 232 |
2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 233 |
2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 234 |
2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 235 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 236 |
2SC3906KFRA |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 237 |
2SC3906KFRAT146 |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 238 |
2SC3906KT146 |
NPN General Purpose Amplification Transistor |
ROHM |
| 239 |
2SC3933 |
For UHF amplification/mixing |
Panasonic |
| 240 |
2SC3942 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| | | |
