| No. |
Part Name |
Description |
Manufacturer |
| 211 |
PM7339 |
SATURN USER NETWORK INTERFACE CELL DELINEATION BLOCK |
PMC-Sierra Inc |
| 212 |
Q62702-G0041 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 213 |
Q62702-G0042 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 214 |
Q62702-G0043 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 215 |
Q62702-G0057 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 216 |
Q62702-G0067 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 217 |
QPA9124 |
3.0 - 5.0 GHz 100 Ohm Differential Output Gain Block |
Qorvo |
| 218 |
QPA9126 |
High Linearity Gain Block |
Qorvo |
| 219 |
QPA9127 |
High Linearity Gain Block |
Qorvo |
| 220 |
QPA9143 |
2.3 - 3.8 GHz 100 Ohm Differential Input Gain Block |
Qorvo |
| 221 |
QPA9154 |
2.3 - 3.8 GHz 100 Ohm Differential Output Gain Block |
Qorvo |
| 222 |
RF3394 |
General Purpose Amplifier Gain Block |
RF Micro Devices |
| 223 |
RF3395 |
General Purpose Amplifier Gain Block |
RF Micro Devices |
| 224 |
RF3396 |
General Purpose Amplifier Gain Block |
RF Micro Devices |
| 225 |
RF3397 |
General Purpose Amplifier Gain Block |
RF Micro Devices |
| 226 |
RF3398 |
General Purpose Amplifier Gain Block |
RF Micro Devices |
| 227 |
RFCA8830 |
45 - 1218 MHz High Linearity, Low Noise CATV Gain Block |
Qorvo |
| 228 |
SBB3089Z |
50 - 6000 MHz InGaP HBT Active Bias Gain Block |
Qorvo |
| 229 |
SGA-0163 |
DC-4500 MHz, 2.1V silicon germanium cascadeable gain block |
Stanford Microdevices |
| 230 |
SGA-0363 |
DC-5000 MHz, 2.5V silicon germanium cascadeable gain block |
Stanford Microdevices |
| 231 |
SGA-1163 |
DC-6000 MHz, 4.6V silicon germanium cascadeable gain block |
Stanford Microdevices |
| 232 |
SGA-1263 |
DC-4000 MHz, 2.8V silicon germanium HBT cascadeable gain block |
Stanford Microdevices |
| 233 |
SGA-2363 |
DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. |
Stanford Microdevices |
| 234 |
SGA-2386 |
DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. High gain: 17.2 dB typ. at 850 MHz. |
Stanford Microdevices |
| 235 |
SGA-3563 |
DC-5000 MHz, 3.2V, silicon germanium cascadeable gain block |
Stanford Microdevices |
| 236 |
SGA-3586 |
DC-5000 MHz, 3.5V, silicon germanium cascadeable gain block |
Stanford Microdevices |
| 237 |
SGA-4563 |
DC-2500 MHz. 3.5V silicon germanium cascdeable gain block. |
Stanford Microdevices |
| 238 |
SGA-4586 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +29 dBm typ at 850 MHz |
Stanford Microdevices |
| 239 |
SGA-5263 |
DC-4500 MHz, silicon germanium cascadeable gain block. High output intercept: 29 dBm typ at 1950 MHz |
Stanford Microdevices |
| 240 |
SGA-5286 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.0 dBm typ at 850 MHz |
Stanford Microdevices |
| | | |
