| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N6298CA |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 212 |
1N6299 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 213 |
1N6299 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 214 |
1N6299 |
150 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 215 |
1N6299 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 216 |
1N6299 |
Transient Voltage Suppressor |
Microsemi |
| 217 |
1N6299 |
Diode TVS Single Uni-Dir 121V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 218 |
1N6299 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 219 |
1N6299 |
TRANSZORB�Transient Voltage Suppressors |
Vishay |
| 220 |
1N6299A |
Leaded Zener Diode Transient Supressor |
Central Semiconductor |
| 221 |
1N6299A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 222 |
1N6299A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 223 |
1N6299A |
150 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 224 |
1N6299A |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 225 |
1N6299A |
Transient Voltage Suppressor |
Microsemi |
| 226 |
1N6299A |
Diode TVS Single Uni-Dir 128V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 227 |
1N6299A |
Zener 150V 1500W 5% |
ON Semiconductor |
| 228 |
1N6299A |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 229 |
1N6299A |
TRANSZORB�Transient Voltage Suppressors |
Vishay |
| 230 |
1N6299ARL4 |
Zener 150V 1500W 5% |
ON Semiconductor |
| 231 |
1N6299C |
150 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 232 |
1N6299C |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 233 |
1N6299CA |
150 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 234 |
1N6299CA |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 235 |
2N629 |
Germanium PNP Transistor |
Motorola |
| 236 |
2N629 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 237 |
2N6290 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 238 |
2N6290 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 239 |
2N6290 |
40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 |
Continental Device India Limited |
| 240 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
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