| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N6677 |
0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 212 |
1N6677 |
Schottky Rectifier |
Microsemi |
| 213 |
1N6677 |
Diode Schottky 40V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 214 |
1N6677-1 |
Si Schottky Rectifier Diodes |
Microsemi |
| 215 |
1N6677-1e3 |
Si Schottky Rectifier Diodes |
Microsemi |
| 216 |
1N6677UR-1 |
0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
Microsemi |
| 217 |
1N668 |
Zener Diode |
Motorola |
| 218 |
1N669 |
Zener Diode |
Motorola |
| 219 |
1N66A |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 220 |
1N66A |
Germanium Signal diode |
Motorola |
| 221 |
1N66A |
GOLD BOUNDED GERMANUM DIODE |
New Jersey Semiconductor |
| 222 |
22JGQ045 |
30A 45V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N6660CAT1 |
International Rectifier |
| 223 |
22JGQ045SCV |
30A 45V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N6660CAT1 |
International Rectifier |
| 224 |
22JGQ045SCX |
30A 45V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N6660CAT1 |
International Rectifier |
| 225 |
2N66 |
PNP Transistor |
Motorola |
| 226 |
2N660 |
SCRs |
Central Semiconductor |
| 227 |
2N660 |
Germanium PNP Transistor |
Motorola |
| 228 |
2N660 |
Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 229 |
2N6603 |
NPN silicon high frequency transistor NF=2.0dB - 1GHz |
Motorola |
| 230 |
2N6604 |
NPN silicon high frequency transistor NF=2.7dB - 1.0GHz |
Motorola |
| 231 |
2N6605 |
Leaded Thyristor SCR |
Central Semiconductor |
| 232 |
2N6606 |
Leaded Thyristor SCR |
Central Semiconductor |
| 233 |
2N6607 |
Leaded Thyristor SCR |
Central Semiconductor |
| 234 |
2N6608 |
Leaded Thyristor SCR |
Central Semiconductor |
| 235 |
2N6609 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 236 |
2N6609 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 237 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
| 238 |
2N6609 |
POWER TRANSISTORS(16A,140V,150W) |
MOSPEC Semiconductor |
| 239 |
2N6609 |
16A complementary power transistor 140V 150W |
Motorola |
| 240 |
2N6609 |
Trans GP BJT PNP 140V 16A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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