| No. |
Part Name |
Description |
Manufacturer |
| 211 |
KM418RD32AC |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 212 |
KM418RD32AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 213 |
KM418RD32C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 214 |
KM418RD32D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 215 |
KM418RD4AC |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 216 |
KM418RD4AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 217 |
KM418RD4C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 218 |
KM418RD4D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 219 |
KM418RD8AC(D)-RG60 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 220 |
KM418RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 221 |
KM418RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 222 |
KM418RD8AC-RG60 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
| 223 |
KM418RD8AC-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 224 |
KM418RD8AC-RK80 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 225 |
KM418RD8AD-RG60 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
| 226 |
KM418RD8AD-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 227 |
KM418RD8AD-RK80 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 228 |
KM418RD8C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 229 |
KM418RD8D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 230 |
L159M1 |
1 differential amp. and 3 independent NPN transistors array |
SGS-ATES |
| 231 |
L159M3 |
1 differential amp. and 3 independent NPN transistors array |
SGS-ATES |
| 232 |
L5956 |
Voltage regulator with ignition comparator, reset, overcurrent protection and 3.3V regulator with independent enable |
ST Microelectronics |
| 233 |
L5956PD |
Voltage regulator with ignition comparator, reset, overcurrent protection and 3.3V regulator with independent enable |
ST Microelectronics |
| 234 |
L5956PDTR |
Voltage regulator with ignition comparator, reset, overcurrent protection and 3.3V regulator with independent enable |
ST Microelectronics |
| 235 |
L5957 |
Voltage regulator with ignition comparator, reset, overcurrent protection, 5V regulator (CAN) with independent enable |
ST Microelectronics |
| 236 |
L5957PD |
Voltage regulator with ignition comparator, reset, overcurrent protection, 5V regulator (CAN) with independent enable |
ST Microelectronics |
| 237 |
L5957PDTR |
Voltage regulator with ignition comparator, reset, overcurrent protection, 5V regulator (CAN) with independent enable |
ST Microelectronics |
| 238 |
LC508 |
Class A Amplifier with 3 Independent Gain Blocks |
Gennum Corporation |
| 239 |
LMK03328 |
Ultra-Low Jitter Clock Generator Family With Two Independent PLLs 48-WQFN -40 to 85 |
Texas Instruments |
| 240 |
LMK03328RHSR |
Ultra-Low Jitter Clock Generator Family With Two Independent PLLs 48-WQFN -40 to 85 |
Texas Instruments |
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