No. |
Part Name |
Description |
Manufacturer |
211 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
212 |
2N5907 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
213 |
2N5908 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
214 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
215 |
2N5908 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
216 |
2N5909 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
217 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
218 |
2N5909 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
219 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
220 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
221 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
222 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
223 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
224 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
225 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
226 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
227 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
228 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
229 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
230 |
2N6051 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
231 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
232 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
233 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
234 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
235 |
2N6054 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
236 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
237 |
2N6056 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
238 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
239 |
2N6057 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
240 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
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