| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BTW69-1200N |
50 A - 1200 V non-insulated SCR thyristor |
ST Microelectronics |
| 212 |
BUK854-800A |
Insulated Gate Bipolar Transistor IGBT |
Philips |
| 213 |
BUK856-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
Philips |
| 214 |
BUK856-800 |
Insulated Gate Bipolar Transistor IGBT |
Philips |
| 215 |
BUK856-800A |
Insulated Gate Bipolar Transistor IGBT |
Philips |
| 216 |
BUK866-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
Philips |
| 217 |
C1658 |
Approved for use with Conexant ADSL Chip Set Meets requirements of IEC950 for supplementary insulation, 250V working voltage |
CoEv Inc |
| 218 |
C1676 |
Approved for use with GlobeSpan HDSL2 Chip Set Meets the requirements of IEC60950 for supplementary insulation, 250V working voltage |
CoEv Inc |
| 219 |
C2042 |
Analog Devices AD20MSP930 CPE Line Transformer Meet requirements of IEC60950 for supplementary insulation, 250V working voltage |
CoEv Inc |
| 220 |
C67070-A2107-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 221 |
C67070-A2120-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 222 |
C67070-A2300-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 223 |
C67070-A2301-A70 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
| 224 |
C67070-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
| 225 |
C67070-A2701-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 226 |
C67070-A2702-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 227 |
C67070-A2703-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 228 |
C67070-A2704-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 229 |
C67076-A2009-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 230 |
C67076-A2010-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 231 |
C67076-A2105-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 232 |
C67076-A2106-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 233 |
C67076-A2107-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 234 |
C67076-A2108-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 235 |
C67076-A2109-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 236 |
CM1000HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 237 |
CM1000HA-28H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 238 |
CM100BU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 239 |
CM100DU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 240 |
CM100DU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
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