No. |
Part Name |
Description |
Manufacturer |
211 |
1N975 |
39.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
212 |
1N975A |
39.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
213 |
1N975B |
39.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
214 |
1N976 |
43.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
215 |
1N976A |
43.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
216 |
1N976B |
43.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
217 |
1N977 |
47.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
218 |
1N977A |
47.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
219 |
1N977B |
47.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
220 |
1S1579 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
221 |
1S1580 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
222 |
1S1920 |
Silicon Diffused Junction Diode used for TV Horizontal Deflection Damper |
Hitachi Semiconductor |
223 |
1S1921A |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -200V |
Hitachi Semiconductor |
224 |
1S1921B |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V |
Hitachi Semiconductor |
225 |
1S1921C |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V |
Hitachi Semiconductor |
226 |
1S1921D |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V |
Hitachi Semiconductor |
227 |
1S1921E |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V |
Hitachi Semiconductor |
228 |
1S1921F |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V |
Hitachi Semiconductor |
229 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
230 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
231 |
1S77 |
Germanium Gold Bond for TV Horizontal Deflection Oscillator stage damper |
Hitachi Semiconductor |
232 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
233 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
234 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
235 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
236 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
237 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
238 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
239 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
240 |
2N2221 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
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