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Datasheets for NTAL

Datasheets found :: 2870
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No. Part Name Description Manufacturer
211 1N975 39.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
212 1N975A 39.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
213 1N975B 39.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
214 1N976 43.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
215 1N976A 43.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
216 1N976B 43.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
217 1N977 47.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
218 1N977A 47.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
219 1N977B 47.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
220 1S1579 Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad TOSHIBA
221 1S1580 Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad TOSHIBA
222 1S1920 Silicon Diffused Junction Diode used for TV Horizontal Deflection Damper Hitachi Semiconductor
223 1S1921A Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -200V Hitachi Semiconductor
224 1S1921B Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V Hitachi Semiconductor
225 1S1921C Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V Hitachi Semiconductor
226 1S1921D Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V Hitachi Semiconductor
227 1S1921E Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V Hitachi Semiconductor
228 1S1921F Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V Hitachi Semiconductor
229 1S689 Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar Hitachi Semiconductor
230 1S689A Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar Hitachi Semiconductor
231 1S77 Germanium Gold Bond for TV Horizontal Deflection Oscillator stage damper Hitachi Semiconductor
232 2N1613 0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. Continental Device India Limited
233 2N1711 0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
234 2N1893 0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. Continental Device India Limited
235 2N2102 1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
236 2N2218 0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. Continental Device India Limited
237 2N2218A 0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. Continental Device India Limited
238 2N2219 0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. Continental Device India Limited
239 2N2219A 0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. Continental Device India Limited
240 2N2221 0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. Continental Device India Limited


Datasheets found :: 2870
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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