| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SB77 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 212 |
2SB77 |
GERMANIUM PNP ALLOYED JUNCTION (LOW SPEED SWITCHING AUDIO FREQUENCY POWER OUTPUT) |
Unknow |
| 213 |
2SB77A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 214 |
2SB834 |
Silicon PNP triple diffused audio frequency power transistor |
TOSHIBA |
| 215 |
2SB906 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS). AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 216 |
2SB994 |
Silicon PNP triple diffused audio frequency power transistor, complementary to 2SD1354 |
TOSHIBA |
| 217 |
2SC1000 |
Audio Frequency Transistor |
TOSHIBA |
| 218 |
2SC1004A |
Audio Frequency Transistor |
TOSHIBA |
| 219 |
2SC1079 |
Audio Frequency Transistor |
TOSHIBA |
| 220 |
2SC1080 |
Audio Frequency Transistor |
TOSHIBA |
| 221 |
2SC1096 |
NPN silicon transistor for audio frequency and low speed switching applications |
NEC |
| 222 |
2SC1164 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 223 |
2SC1166 |
Audio Frequency Transistor |
TOSHIBA |
| 224 |
2SC1167 |
Audio Frequency Transistor |
TOSHIBA |
| 225 |
2SC1168 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 226 |
2SC1170 |
Audio Frequency Transistor |
TOSHIBA |
| 227 |
2SC1170A |
Audio Frequency Transistor |
TOSHIBA |
| 228 |
2SC1171 |
Audio Frequency Transistor |
TOSHIBA |
| 229 |
2SC1172 |
Audio Frequency Transistor |
TOSHIBA |
| 230 |
2SC1172A |
Audio Frequency Transistor |
TOSHIBA |
| 231 |
2SC1173 |
Audio Frequency Transistor |
TOSHIBA |
| 232 |
2SC1622 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 233 |
2SC1622A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 234 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 235 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 236 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 237 |
2SC1815L |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE/ LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 238 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 239 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 240 |
2SC2270 |
Strobo Flash Applications |
TOSHIBA |
| | | |
