| No. |
Part Name |
Description |
Manufacturer |
| 211 |
DF1 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 212 |
DF1 |
Germanium junction photodiode |
IPRS Baneasa |
| 213 |
DF2 |
Germanium photodiode |
IPRS Baneasa |
| 214 |
DF2 |
Ge PHOTODIODE |
IPRS Baneasa |
| 215 |
DF2 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 216 |
DF3 |
Germanium photodiode |
IPRS Baneasa |
| 217 |
DF3 |
Ge PHOTODIODE |
IPRS Baneasa |
| 218 |
DF3 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 219 |
FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode |
Fujitsu Microelectronics |
| 220 |
G1115 |
GaAsP photodiode |
Hamamatsu Corporation |
| 221 |
G1116 |
GaAsP photodiode |
Hamamatsu Corporation |
| 222 |
G1117 |
GaAsP photodiode |
Hamamatsu Corporation |
| 223 |
G1118 |
GaAsP photodiode |
Hamamatsu Corporation |
| 224 |
G1120 |
GaAsP photodiode |
Hamamatsu Corporation |
| 225 |
G1126-02 |
GaAsP photodiode |
Hamamatsu Corporation |
| 226 |
G1127-02 |
GaAsP photodiode |
Hamamatsu Corporation |
| 227 |
G1735 |
GaAsP photodiode |
Hamamatsu Corporation |
| 228 |
G1736 |
GaAsP photodiode |
Hamamatsu Corporation |
| 229 |
G1737 |
GaAsP photodiode |
Hamamatsu Corporation |
| 230 |
G1738 |
GaAsP photodiode |
Hamamatsu Corporation |
| 231 |
G1740 |
GaAsP photodiode |
Hamamatsu Corporation |
| 232 |
G1746 |
GaAsP photodiode |
Hamamatsu Corporation |
| 233 |
G1747 |
GaAsP photodiode |
Hamamatsu Corporation |
| 234 |
G1961 |
GaP photodiode |
Hamamatsu Corporation |
| 235 |
G1962 |
GaP photodiode |
Hamamatsu Corporation |
| 236 |
G1963 |
GaP photodiode |
Hamamatsu Corporation |
| 237 |
G2119 |
GaAsP photodiode |
Hamamatsu Corporation |
| 238 |
G2711-01 |
GaAsP photodiode |
Hamamatsu Corporation |
| 239 |
G3067 |
GaAsP photodiode |
Hamamatsu Corporation |
| 240 |
G3297 |
GaAsP photodiode |
Hamamatsu Corporation |
| | | |
