No. |
Part Name |
Description |
Manufacturer |
211 |
2N2586 |
NPN low level low noise type. |
Fairchild Semiconductor |
212 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
213 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
214 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
215 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
216 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
217 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
218 |
2N2904 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
219 |
2N2904A |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
220 |
2N2905 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
221 |
2N2905A |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
222 |
2N2906 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
223 |
2N2906A |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
224 |
2N2907 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
225 |
2N2907A |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
226 |
2N3009 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
227 |
2N3011 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
228 |
2N3013 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
229 |
2N3014 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
230 |
2N3043 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
231 |
2N3044 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
232 |
2N3045 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
233 |
2N3046 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
234 |
2N3047 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
235 |
2N3048 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
236 |
2N3049 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
237 |
2N3050 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
238 |
2N3117 |
NPN low level low noise amplifier. |
Fairchild Semiconductor |
239 |
2N3133 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
240 |
2N3134 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
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