No. |
Part Name |
Description |
Manufacturer |
211 |
74LCXR2245MSA |
Low Voltage Bidirectional Transceiver with 5V Tolerant Inputs and Outputs and 26 Ohm Series Resistors on Both A and B Ports |
Fairchild Semiconductor |
212 |
74LCXR2245MSAX |
Low Voltage Bidirectional Transceiver with 5V Tolerant Inputs and Outputs and 26 Ohm Series Resistors on Both A and B Ports |
Fairchild Semiconductor |
213 |
74LCXR2245MTC |
Low Voltage Bidirectional Transceiver with 5V Tolerant Inputs and Outputs and 26 Ohm Series Resistors on Both A and B Ports |
Fairchild Semiconductor |
214 |
74LCXR2245MTCX |
Low Voltage Bidirectional Transceiver with 5V Tolerant Inputs and Outputs and 26 Ohm Series Resistors on Both A and B Ports |
Fairchild Semiconductor |
215 |
74LCXR2245SJ |
Low Voltage Bidirectional Transceiver with 5V Tolerant Inputs and Outputs and 26 Ohm Series Resistors on Both A and B Ports |
Fairchild Semiconductor |
216 |
74LCXR2245SJX |
Low Voltage Bidirectional Transceiver with 5V Tolerant Inputs and Outputs and 26 Ohm Series Resistors on Both A and B Ports |
Fairchild Semiconductor |
217 |
74LCXR2245WM |
Low Voltage Bidirectional Transceiver with 5V Tolerant Inputs and Outputs and 26 Ohm Series Resistors on Both A and B Ports |
Fairchild Semiconductor |
218 |
74LCXR2245WMX |
Low Voltage Bidirectional Transceiver with 5V Tolerant Inputs and Outputs and 26 Ohm Series Resistors on Both A and B Ports |
Fairchild Semiconductor |
219 |
78M6612-EVM-1 |
78M6612 AC-PMON Evaluation Board User Manual |
MAXIM - Dallas Semiconductor |
220 |
78M6618-PDU-1 |
78M6618 PDU1 Evaluation Board |
MAXIM - Dallas Semiconductor |
221 |
78M6631-EVM-1 |
Evaluation Board for the 78M6631 |
MAXIM - Dallas Semiconductor |
222 |
78Q8430-ARM9-EVM |
78Q8430 ARM9(920T) Embest Evaluation Board User Manual |
MAXIM - Dallas Semiconductor |
223 |
80296SA |
80296SA Evaluation Board Manual |
Intel |
224 |
80610-18 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
225 |
80610-18 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
226 |
80610-50 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
227 |
80610-50 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
228 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
229 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
230 |
81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
231 |
81416-20 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
232 |
81416-6 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
233 |
82022-20 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
234 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
235 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
236 |
82223-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
237 |
82223-4 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
238 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
239 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
240 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
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