| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2W08 |
SILICON BRIDGE RECTIFIERS |
EIC discrete Semiconductors |
| 212 |
2W08 |
SINGLE PHASE 2.0 AMP SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 213 |
2W08 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 214 |
2W08M |
SINGLE PHASE 2.0 AMPS. SILICON BRIDGE RECTIFIERS |
Surge Components |
| 215 |
2W10 |
SILICON BRIDGE RECTIFIERS |
EIC discrete Semiconductors |
| 216 |
2W10 |
SINGLE PHASE 2.0 AMP SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 217 |
2W10 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 218 |
2W10M |
SINGLE PHASE 2.0 AMPS. SILICON BRIDGE RECTIFIERS |
Surge Components |
| 219 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 220 |
3001 |
1 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 221 |
3003 |
3 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 222 |
3005 |
5 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 223 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 224 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 225 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 226 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 227 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 228 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 229 |
4000 |
Common base silicon NPN microwave power transistor featuring a unique Microgrid™ structure |
SGS Thomson Microelectronics |
| 230 |
4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 231 |
4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 232 |
50 OHMS 50 OHMS OHMIC ADDED 9-4-92 OHMIC |
33�43 GHz GaAs MMIC Image Rejection Balanced Mixer |
Alpha Industries Inc |
| 233 |
5962-9323901Q3A |
Scan Path Linkers With 4-Bit Identification Buses |
Texas Instruments |
| 234 |
5962-9323901QXA |
Scan Path Linkers With 4-Bit Identification Buses |
Texas Instruments |
| 235 |
6205N |
EVALUATION BOARD |
ST Microelectronics |
| 236 |
71117 |
SI9113 Demonstration Board |
Vishay |
| 237 |
71M6513H-DB |
Evaluation Board for the 71M6513 and 71M6513H |
MAXIM - Dallas Semiconductor |
| 238 |
730005 |
Evaluation Boards ot the CLC103 and CLC 203 |
Comlinear Corporation |
| 239 |
730006 |
Evaluation Boards ot the CLC103 and CLC 203 |
Comlinear Corporation |
| 240 |
730007 |
Evaluation Board |
Comlinear Corporation |
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