| No. |
Part Name |
Description |
Manufacturer |
| 211 |
LT1102CN8 |
High Speed/ Precision/ JFET Input Instrumentation Amplifier(Fixed Gain=10 or 100) |
Linear Technology |
| 212 |
LT1102CN8#PBF |
High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100) |
Linear Technology |
| 213 |
LT1102I |
High Speed/ Precision/ JFET Input Instrumentation Amplifier(Fixed Gain=10 or 100) |
Linear Technology |
| 214 |
LT1102IN8 |
High Speed/ Precision/ JFET Input Instrumentation Amplifier(Fixed Gain=10 or 100) |
Linear Technology |
| 215 |
LT1102IN8#PBF |
High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100) |
Linear Technology |
| 216 |
LT1102M |
High Speed/ Precision/ JFET Input Instrumentation Amplifier(Fixed Gain=10 or 100) |
Linear Technology |
| 217 |
LT1102MH |
High Speed/ Precision/ JFET Input Instrumentation Amplifier(Fixed Gain=10 or 100) |
Linear Technology |
| 218 |
LT1102MJ8 |
High Speed/ Precision/ JFET Input Instrumentation Amplifier(Fixed Gain=10 or 100) |
Linear Technology |
| 219 |
MAX821PUS-T |
Microprocessor voltage monitor with pin-selectable power-on reset timeout delay (1ms,max, 20ms,min or 100ms,min). Reset threshold(nom) 4.00V. Active-low reset output. |
MAXIM - Dallas Semiconductor |
| 220 |
MJ420S |
High-Voltage NPN Silicon Transistor 100mA 2.5W |
Motorola |
| 221 |
MJ421S |
High-Voltage NPN Silicon Transistor 100mA 2.5W |
Motorola |
| 222 |
MJ424 |
High Voltage NPN power silicon Transistor 100W |
Motorola |
| 223 |
MJ425 |
High Voltage NPN power silicon Transistor 100W |
Motorola |
| 224 |
MJ7000 |
30A High-Power NPN Silicon Transistor 100V 150W |
Motorola |
| 225 |
MOD100A |
MOSPOWER 4 N-Channel Enhancement Mode Transistor 100V 21A |
Siliconix |
| 226 |
MOD100B |
MOSPOWER 4 N-Channel Enhancement Mode Transistor 100V 21A |
Siliconix |
| 227 |
MOD100C |
MOSPOWER 4 N-Channel Enhancement Mode Transistor 100V 21A |
Siliconix |
| 228 |
MRD450 |
40 Volt Plastic NPN Silicon Photo Transistor 100 milliwatts |
Motorola |
| 229 |
MRF317 |
Controlled Q Broadband RF power NPN silicon transistor 100W 30-200MHz |
Motorola |
| 230 |
MRF329 |
Controlled Q Broadband RF power NPN silicon transistor 100W 100-500MHz |
Motorola |
| 231 |
MRF421MP |
NPN Silicon RF Power Transistor 100W (PEP) - 30MHz |
Motorola |
| 232 |
MRF525 |
NPN silicon high frequency transistor 100-500MHz Broadband |
Motorola |
| 233 |
MV1805C |
High-frequency step-recovery silicon power varactor for 100 MHz to 2.0 GHz |
Motorola |
| 234 |
MV1806C |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 235 |
MV1807C |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 236 |
NSAD500F |
Prevention of ESD and surge for high-speed interface(USB 2.0, IEEE1394,or 100B) |
NEC |
| 237 |
NSAD500H |
Prevention of ESD and surge for high-speed interface(USB2.0, IEEE1394, or 100B) |
NEC |
| 238 |
NSAD500S |
Prevention of ESD and surge for high-speed interface(USB 2.0, IEEE1394,or 100B) |
NEC |
| 239 |
PT9780 |
SSB Power RF Transistor 100W PEP 28V 2-30MHz 14dB |
Motorola |
| 240 |
PT9780 |
SSB Power Transistor 100W 28V |
TRW |
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