| No. |
Part Name |
Description |
Manufacturer |
| 211 |
PE3291-11 |
1.2 GHz / 550 MHz dual fractional-N flexiPower PLL for frequency synthesis |
Peregrine Semiconductor |
| 212 |
PE3291-12 |
1.2 GHz / 550 MHz dual fractional-N flexiPower PLL for frequency synthesis |
Peregrine Semiconductor |
| 213 |
PE3291-14 |
1.2 GHz / 550 MHz dual fractional-N flexiPower PLL for frequency synthesis |
Peregrine Semiconductor |
| 214 |
PE3291-15 |
1.2 GHz / 550 MHz dual fractional-N flexiPower PLL for frequency synthesis |
Peregrine Semiconductor |
| 215 |
PE3293 |
1.8GHz/550MHz Dual Fractional-N Ultra-Low Spurious PLL for Frequency Synthesis |
etc |
| 216 |
PE3293-00 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 217 |
PE3293-04 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 218 |
PE3293-11 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 219 |
PE3293-12 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 220 |
PE3293-14 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 221 |
PE3293-15 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 222 |
Q62702-A1025 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 223 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 224 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 225 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 226 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 227 |
Q62702-A120 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
Siemens |
| 228 |
Q62702-A1261 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 229 |
Q62702-A1267 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 230 |
Q62702-A1268 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 231 |
Q62702-A764 |
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz) |
Siemens |
| 232 |
Q62702-A786 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
Siemens |
| 233 |
Q62702-D3429 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
| 234 |
Q62702-D3431 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
| 235 |
Q62702-D3433 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
| 236 |
Q62702-D3435 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
| 237 |
Q62702-D3437 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
| 238 |
Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 239 |
Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 240 |
Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
| | | |
