| No. |
Part Name |
Description |
Manufacturer |
| 211 |
CLD185R |
Silicon Photodiode, 3 leaded TO-8 metal can |
Clairex Technologies |
| 212 |
CLD340 |
GaAs Photodidoe, TO-46 metal can |
Clairex Technologies |
| 213 |
CLD370F |
Silicon Photodiode, 5mm (T-1 3/4) plastic |
Clairex Technologies |
| 214 |
CXA1103 |
PHOTODIODE I-V CONVERSION AMPLIFIER |
SONY |
| 215 |
CXA1103AM |
Photodiode I-V Conversion Amplifier |
SONY |
| 216 |
DF1 |
Germanium photodiode |
IPRS Baneasa |
| 217 |
DF1 |
Ge PHOTODIODE |
IPRS Baneasa |
| 218 |
DF1 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 219 |
DF1 |
Germanium junction photodiode |
IPRS Baneasa |
| 220 |
DF2 |
Germanium photodiode |
IPRS Baneasa |
| 221 |
DF2 |
Ge PHOTODIODE |
IPRS Baneasa |
| 222 |
DF2 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 223 |
DF3 |
Germanium photodiode |
IPRS Baneasa |
| 224 |
DF3 |
Ge PHOTODIODE |
IPRS Baneasa |
| 225 |
DF3 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 226 |
FG2 |
Fotodioda |
Ultra CEMI |
| 227 |
FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode |
Fujitsu Microelectronics |
| 228 |
G1115 |
GaAsP photodiode |
Hamamatsu Corporation |
| 229 |
G1116 |
GaAsP photodiode |
Hamamatsu Corporation |
| 230 |
G1117 |
GaAsP photodiode |
Hamamatsu Corporation |
| 231 |
G1118 |
GaAsP photodiode |
Hamamatsu Corporation |
| 232 |
G1120 |
GaAsP photodiode |
Hamamatsu Corporation |
| 233 |
G1126-02 |
GaAsP photodiode |
Hamamatsu Corporation |
| 234 |
G1127-02 |
GaAsP photodiode |
Hamamatsu Corporation |
| 235 |
G1735 |
GaAsP photodiode |
Hamamatsu Corporation |
| 236 |
G1736 |
GaAsP photodiode |
Hamamatsu Corporation |
| 237 |
G1737 |
GaAsP photodiode |
Hamamatsu Corporation |
| 238 |
G1738 |
GaAsP photodiode |
Hamamatsu Corporation |
| 239 |
G1740 |
GaAsP photodiode |
Hamamatsu Corporation |
| 240 |
G1746 |
GaAsP photodiode |
Hamamatsu Corporation |
| | | |
