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Datasheets for OTOTYP

Datasheets found :: 225
Page: | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
211 UT8Q512-IPC 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Prototype flow. Aeroflex Circuit Technology
212 UT8Q512-UPC 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Prototype flow. Aeroflex Circuit Technology
213 UT8R128K32-15WPC 128K x 32 SRAM. 15ns access time. Lead finish gold. Prototype flow. Aeroflex Circuit Technology
214 UT8R256K1615TBDPC 256K x 16 SRAM. 15ns access time. Lead finish gold. Prototype flow. Aeroflex Circuit Technology
215 UT8R512K8-15UPC 512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow. Aeroflex Circuit Technology
216 UT9Q512-20IPC 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow. Aeroflex Circuit Technology
217 UT9Q512-20UPC 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow. Aeroflex Circuit Technology
218 UT9Q512-IPC 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow. Aeroflex Circuit Technology
219 UT9Q512-UPC 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow. Aeroflex Circuit Technology
220 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
221 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
222 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
223 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
224 W6NXD3L-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
225 W6PXD3O-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 225
Page: | 4 | 5 | 6 | 7 | 8 |



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