| No. |
Part Name |
Description |
Manufacturer |
| 211 |
NX8501AG-CA |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 212 |
NX8501BC |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 213 |
NX8501BC-BA |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 214 |
NX8501BC-CA |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 215 |
NX8501BG |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 216 |
NX8501BG-BA |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 217 |
NX8501BG-CA |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 218 |
NX8501CC |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 219 |
NX8501CC-BA |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 220 |
NX8501CC-CA |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 221 |
NX8501CG |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 222 |
NX8501CG-BA |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 223 |
NX8501CG-CA |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 224 |
NX8561JC |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
NEC |
| 225 |
NX8561JC |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 226 |
NX8561JD |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 227 |
NX8562LB |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
NEC |
| 228 |
NX8562LB |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 229 |
NX8562LB |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 230 |
NX8563LB |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 231 |
NX8563LB |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
NEC |
| 232 |
NX8563LB |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
| 233 |
OD-8326 |
LD module (DC-PBH). |
NEC |
| 234 |
PBHV2160Z |
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor |
Nexperia |
| 235 |
PBHV3160Z |
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor |
Nexperia |
| 236 |
PBHV8115T |
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor |
Nexperia |
| 237 |
PBHV8115T |
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor |
NXP Semiconductors |
| 238 |
PBHV8115TLH |
150 V, 1 A NPN high-voltage low VCEsat BISS transistor |
Nexperia |
| 239 |
PBHV8115X |
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor |
Nexperia |
| 240 |
PBHV8115X |
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor |
NXP Semiconductors |
| | | |
