No. |
Part Name |
Description |
Manufacturer |
211 |
PSMN069-100YS |
N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET |
Nexperia |
212 |
PSMN069-100YS |
N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET |
NXP Semiconductors |
213 |
PSMN070-200B |
N-channel TrenchMOS SiliconMAX standard level FET |
Nexperia |
214 |
PSMN070-200B |
N-channel TrenchMOS SiliconMAX standard level FET |
NXP Semiconductors |
215 |
PSMN070-200B |
N-channel TrenchMOS(tm) transistor |
Philips |
216 |
PSMN070-200P |
N-channel TrenchMOS SiliconMAX standard level FET |
NXP Semiconductors |
217 |
PSMN070-200P |
N-channel TrenchMOS(tm) transistor |
Philips |
218 |
PSMN075-100MSE |
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications |
Nexperia |
219 |
PSMN075-100MSE |
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications |
NXP Semiconductors |
220 |
PSMN085-150K |
N-channel TrenchMOS SiliconMAX standard level FET |
NXP Semiconductors |
221 |
PSMN085-150K |
N-channel enhancement mode field-effect transistor |
Philips |
222 |
PSMN0R7-25YLD |
N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Nexperia |
223 |
PSMN0R9-25YLC |
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology |
Nexperia |
224 |
PSMN0R9-25YLC |
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology |
NXP Semiconductors |
225 |
PSMN0R9-25YLD |
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Nexperia |
226 |
PSMN0R9-30ULD |
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology |
Nexperia |
227 |
PSMN0R9-30YLD |
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Nexperia |
228 |
PSMN0R9-30YLD |
N-channel 30 V, 0.87 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
NXP Semiconductors |
229 |
PSMN102-200Y |
N-channel TrenchMOS SiliconMAX standard level FET |
Nexperia |
230 |
PSMN102-200Y |
N-channel TrenchMOS SiliconMAX standard level FET |
NXP Semiconductors |
231 |
PSMN130-200D |
N-channel TrenchMOS SiliconMAX standard level FET |
Nexperia |
232 |
PSMN130-200D |
N-channel TrenchMOS SiliconMAX standard level FET |
NXP Semiconductors |
233 |
PSMN130-200D |
N-channel TrenchMOS(tm) transistor |
Philips |
234 |
PSMN155-200K |
200 V, N-channel enhancement mode field-effect transistor |
Philips |
235 |
PSMN165-200K |
N-channel TrenchMOS SiliconMAX standard level FET |
NXP Semiconductors |
236 |
PSMN165-200K |
N-channel enhancement mode field-effect transistor |
Philips |
237 |
PSMN1R0-25YLD |
N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Nexperia |
238 |
PSMN1R0-30YLC |
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology |
Nexperia |
239 |
PSMN1R0-30YLC |
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology |
NXP Semiconductors |
240 |
PSMN1R0-30YLD |
N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Nexperia |
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