| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N3055/4 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
| 212 |
2N3055/4 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 213 |
2N3055/5 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
| 214 |
2N3055/5 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 215 |
2N3055/6 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
| 216 |
2N3055/6 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 217 |
2N3055/7 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
| 218 |
2N3055/7 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 219 |
2N3055/8 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
| 220 |
2N3055/8 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 221 |
2N3055/9 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
| 222 |
2N3055/9 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 223 |
2N3055H |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 224 |
2N3055W |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 225 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 226 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 227 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 228 |
2N3210 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
| 229 |
2N3211 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
| 230 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
| 231 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 232 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 233 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 234 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 235 |
2N3331 |
JFET Low-Frequency P-Channel - DEPLETION |
Motorola |
| 236 |
2N3375 |
Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 237 |
2N3375 |
High Frequency NPN transistor |
CCSIT-CE |
| 238 |
2N3375 |
NPN Silicon High-Frequency Transistor |
Siemens |
| 239 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 240 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
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