| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N6379 |
Zener 25.9V 1500W |
ON Semiconductor |
| 212 |
1N6379RL4 |
Zener 25.9V 1500W |
ON Semiconductor |
| 213 |
1N6387 |
Diode TVS Single Bi-Dir 22V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 214 |
1S1291 |
General-Purpose silicon rectifier 25A |
TOSHIBA |
| 215 |
1S1291R |
General-Purpose silicon rectifier 25A |
TOSHIBA |
| 216 |
1S1292 |
General-Purpose silicon rectifier 25A |
TOSHIBA |
| 217 |
1S1292R |
General-Purpose silicon rectifier 25A |
TOSHIBA |
| 218 |
1S1417 |
Controlled avalanche silicon rectifier 25A |
TOSHIBA |
| 219 |
1S1418 |
Controlled avalanche silicon rectifier 25A |
TOSHIBA |
| 220 |
1S1419 |
Controlled avalanche silicon rectifier 25A |
TOSHIBA |
| 221 |
1S1647 |
Silicon diffused junction rectifier 200A 150V |
TOSHIBA |
| 222 |
1S1647R |
Silicon diffused junction rectifier 200A 150V, reverse polarity |
TOSHIBA |
| 223 |
1S20 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 224 |
1S30 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 225 |
1S40 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 226 |
1S50 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 227 |
1S60 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 228 |
1S80 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 229 |
1SA0 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 230 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 231 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 232 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 233 |
20RM200 |
High Voltage silicon rectifier 20kV |
SESCOSEM |
| 234 |
20RM220 |
High Voltage silicon rectifier 22kV |
SESCOSEM |
| 235 |
20RM250 |
High Voltage silicon rectifier 25kV |
SESCOSEM |
| 236 |
22CC11 |
Silicon diffused junction rectifier 22A 150V |
TOSHIBA |
| 237 |
22CD11 |
Silicon diffused junction rectifier 22A 150V |
TOSHIBA |
| 238 |
22FC11 |
Silicon diffused junction rectifier 22A 300V |
TOSHIBA |
| 239 |
22FD11 |
Silicon diffused junction rectifier 22A 300V |
TOSHIBA |
| 240 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
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