| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BCR166L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
| 212 |
BCR166L3E6327 |
Digital Transistors - R1= 4,7 kOhm ; R2= 47 kOhm |
Infineon |
| 213 |
BCR166T |
Single digital (complex) AF-Transistors in SC75 package |
Infineon |
| 214 |
BCR166TE6327 |
Digital Transistors - R1=4,7 kOhm R2=47 kOhm |
Infineon |
| 215 |
BCR166W |
Digital Transistors - R1= 4,7 kOhm ; R2= 47 kOhm |
Infineon |
| 216 |
BCR166W |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 217 |
BCR169 |
Digital Transistors - R1= 4,7 kOhm |
Infineon |
| 218 |
BCR169 |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 219 |
BCR169F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 220 |
BCR169FE6327 |
Digital Transistors - R1= 4,7 kOhm |
Infineon |
| 221 |
BCR169L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
| 222 |
BCR169L3E6327 |
Digital Transistors - R1= 4,7 kOhm |
Infineon |
| 223 |
BCR169S |
Digital Transistors - SOT363 package |
Infineon |
| 224 |
BCR169S |
PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 225 |
BCR169T |
Single digital (complex) AF-Transistors in SC75 package |
Infineon |
| 226 |
BCR169TE6327 |
Digital Transistors - R1=4,7 kOhm |
Infineon |
| 227 |
BCR169U |
Digital Transistors - SC74 package |
Infineon |
| 228 |
BCR169W |
Digital Transistors - R1= 4,7 kOhm |
Infineon |
| 229 |
BCR169W |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 230 |
BCR16A |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
Mitsubishi Electric Corporation |
| 231 |
BCR16B |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
Mitsubishi Electric Corporation |
| 232 |
BCR16C |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
Mitsubishi Electric Corporation |
| 233 |
BCR16CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 234 |
BCR16CM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 235 |
BCR16CM |
Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 236 |
BCR16CM-12 |
Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 237 |
BCR16CM-12L |
Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 238 |
BCR16CM-8 |
Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 239 |
BCR16CM-8L |
Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 240 |
BCR16CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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