No. |
Part Name |
Description |
Manufacturer |
211 |
5962P0053604QUC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
212 |
5962P0053604QUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
213 |
5962P0053604QXA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
214 |
5962P0053604QXC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
215 |
5962P0053604QXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
216 |
5962P0053604TUA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
217 |
5962P0053604TUC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
218 |
5962P0053604TUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
219 |
5962P0053604TXA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
220 |
5962P0053604TXC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
221 |
5962P0053604TXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
222 |
5962P0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
223 |
5962P0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
224 |
5962P0153301QXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
225 |
5962P0153301TXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
226 |
61LV25616AL |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
227 |
62LV1024SC |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
Brilliance Semiconductor |
228 |
62LV256SC |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
Brilliance Semiconductor |
229 |
62WV12816EC |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
230 |
62WV12816EI |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
231 |
7025ERPQB35 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
232 |
7025ERPQB45 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
233 |
7025ERPQE35 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
234 |
7025ERPQE45 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
235 |
7025ERPQI35 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
236 |
7025ERPQI45 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
237 |
7025ERPQS35 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
238 |
7025ERPQS45 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
239 |
71V016SA |
3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) |
IDT |
240 |
74F1763 |
Intelligent DRAM controller IDC |
Philips |
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