| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N3871 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
| 212 |
2N3872 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
| 213 |
2N3873 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
| 214 |
2N3896 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
| 215 |
2N3897 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
| 216 |
2N3898 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
| 217 |
2N3899 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
| 218 |
2N4103 |
12.5A silicon controlled rectifier. Vrm(non-rep) 700V. |
General Electric Solid State |
| 219 |
2N4234 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
| 220 |
2N4235 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
| 221 |
2N4236 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
| 222 |
2N4398 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
| 223 |
2N4399 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
| 224 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 225 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 226 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 227 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 228 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 229 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 230 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 231 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 232 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 233 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 234 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 235 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 236 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 237 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 238 |
2N923 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 239 |
2N924 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 240 |
2N925 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
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