No. |
Part Name |
Description |
Manufacturer |
211 |
HS-302RH_883S |
Radiation Hardened CMOS Analog Switches |
Intersil |
212 |
HS-303 |
Radiation Hardened CMOS Dual SPDT Analog Switch |
Intersil |
213 |
HS-303AEH |
Radiation Hardened CMOS Dual SPDT Analog Switch |
Intersil |
214 |
HS-303ARH |
Radiation Hardened CMOS Dual SPDT Analog Switch |
Intersil |
215 |
HS-303BEH |
Radiation Hardened CMOS Dual SPDT Analog Switch |
Intersil |
216 |
HS-303BRH |
Radiation Hardened CMOS Dual SPDT Analog Switch |
Intersil |
217 |
HS-303CEH |
Radiation Hardened BiCMOS Dual SPDT Analog Switch |
Intersil |
218 |
HS-303RH |
Analog Switch, SPDT, Dual, NOpen/NClosed, TTL Compliant Inputs, 14 Pins, CMOS, Rad-Hard |
Intersil |
219 |
HS-303RH |
Analog Switch, SPDT, Dual, NOpen/NClosed, TTL Compliant Inputs, 14 Pins, CMOS, Rad-Hard |
Intersil |
220 |
HS-303RH-T |
Radiation Hardened CMOS Dual SPDT Analog Switch |
Intersil |
221 |
HS-303RH883S |
Radiation Hardened CMOS Analog Switches |
Intersil |
222 |
HS-303RH_883S |
Radiation Hardened CMOS Analog Switches |
Intersil |
223 |
HS-306RH883S |
Radiation Hardened CMOS Analog Switches |
Intersil |
224 |
HS-306RH_883S |
Radiation Hardened CMOS Analog Switches |
Intersil |
225 |
HS-307RH |
CMOS Analog Switch |
Intersil |
226 |
HS-307RH883S |
Radiation Hardened CMOS Analog Switches |
Intersil |
227 |
HS-307RH_883S |
Radiation Hardened CMOS Analog Switches |
Intersil |
228 |
ILC7280CS-3025 |
MICROPOWER DUAL 150MA CMOS RF LDO REGULATORS WITH 75DB RIPPLE REJECTION |
Impala Linear Corporation |
229 |
ILC7280CS-3028 |
MICROPOWER DUAL 150MA CMOS RF LDO REGULATORS WITH 75DB RIPPLE REJECTION |
Impala Linear Corporation |
230 |
ILC7280CS-3030 |
MICROPOWER DUAL 150MA CMOS RF LDO REGULATORS WITH 75DB RIPPLE REJECTION |
Impala Linear Corporation |
231 |
KIC3201S-30 |
CMOS Linear Integrated Circuit |
Korea Electronics (KEC) |
232 |
MAX6736XKLTD3-T |
Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
233 |
MAX6736XKMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
234 |
MAX6736XKMSD3-T |
Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
235 |
MAX6736XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
236 |
MAX6736XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
237 |
MAX6736XKRHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
238 |
MAX6736XKRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
239 |
MAX6736XKRYD3-T |
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
240 |
MAX6736XKSDD3-T |
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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