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Datasheets for S-30

Datasheets found :: 539
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No. Part Name Description Manufacturer
211 HS-302RH_883S Radiation Hardened CMOS Analog Switches Intersil
212 HS-303 Radiation Hardened CMOS Dual SPDT Analog Switch Intersil
213 HS-303AEH Radiation Hardened CMOS Dual SPDT Analog Switch Intersil
214 HS-303ARH Radiation Hardened CMOS Dual SPDT Analog Switch Intersil
215 HS-303BEH Radiation Hardened CMOS Dual SPDT Analog Switch Intersil
216 HS-303BRH Radiation Hardened CMOS Dual SPDT Analog Switch Intersil
217 HS-303CEH Radiation Hardened BiCMOS Dual SPDT Analog Switch Intersil
218 HS-303RH Analog Switch, SPDT, Dual, NOpen/NClosed, TTL Compliant Inputs, 14 Pins, CMOS, Rad-Hard Intersil
219 HS-303RH Analog Switch, SPDT, Dual, NOpen/NClosed, TTL Compliant Inputs, 14 Pins, CMOS, Rad-Hard Intersil
220 HS-303RH-T Radiation Hardened CMOS Dual SPDT Analog Switch Intersil
221 HS-303RH883S Radiation Hardened CMOS Analog Switches Intersil
222 HS-303RH_883S Radiation Hardened CMOS Analog Switches Intersil
223 HS-306RH883S Radiation Hardened CMOS Analog Switches Intersil
224 HS-306RH_883S Radiation Hardened CMOS Analog Switches Intersil
225 HS-307RH CMOS Analog Switch Intersil
226 HS-307RH883S Radiation Hardened CMOS Analog Switches Intersil
227 HS-307RH_883S Radiation Hardened CMOS Analog Switches Intersil
228 ILC7280CS-3025 MICROPOWER DUAL 150MA CMOS RF LDO REGULATORS WITH 75DB RIPPLE REJECTION Impala Linear Corporation
229 ILC7280CS-3028 MICROPOWER DUAL 150MA CMOS RF LDO REGULATORS WITH 75DB RIPPLE REJECTION Impala Linear Corporation
230 ILC7280CS-3030 MICROPOWER DUAL 150MA CMOS RF LDO REGULATORS WITH 75DB RIPPLE REJECTION Impala Linear Corporation
231 KIC3201S-30 CMOS Linear Integrated Circuit Korea Electronics (KEC)
232 MAX6736XKLTD3-T Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
233 MAX6736XKMRD3-T Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
234 MAX6736XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
235 MAX6736XKRDD3-T Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
236 MAX6736XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
237 MAX6736XKRHD3-T Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
238 MAX6736XKRVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
239 MAX6736XKRYD3-T Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
240 MAX6736XKSDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 539
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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