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Datasheets for S58

Datasheets found :: 323
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No. Part Name Description Manufacturer
211 NTTFS5811NL Power MOSFET, 40 V, 53 A, 6.4 mΩ ON Semiconductor
212 NTTFS5820NL Power MOSFET, 60 V, 37 A, 11.5 mΩ ON Semiconductor
213 NTTFS5826NL Data Sheet ON Semiconductor
214 NVMFS5826NL Power MOSFET, 60 V, 26 A, 24 mΩ, Single N-Channel ON Semiconductor
215 NVMFS5830NL Power MOSFET 40V 185A 2.3 mOhm Single N-Channel SO-8FL Logic Level ON Semiconductor
216 NVMFS5832NL Power MOSFET 40 V, 4.2 mOhm, 120 A, Single N-Channel SO-8FL ON Semiconductor
217 NVMFS5833N Power MOSFET ON Semiconductor
218 NVMFS5885NL 60 V, 15 mOhm, 39 A, Single N-Channel SO-8FL Power MOSFET ON Semiconductor
219 NVTFS5811NL Power MOSFET, 40 V, 40 A, 6.7 mΩ, Single N-Channel ON Semiconductor
220 NVTFS5820NL Power MOSFET, 60 V, 11.5 mΩ, Single N-Channel ON Semiconductor
221 NVTFS5826NL Power MOSFET, 60 V, 20 A, 24 mΩ, Single N-Channel ON Semiconductor
222 NX8563LAS581-CC Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. SC-UPC. NEC
223 NX8563LAS581-CD Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. SC-APC. NEC
224 NX8563LAS589-CC Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC. NEC
225 NX8563LAS589-CD Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-APC. NEC
226 NX8567SAS581-BC EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.173 nm. Frequency 192.40 THz. FC-UPC connector. NEC
227 NX8567SAS581-CC EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.173 nm. Frequency 192.40 THz. SC-UPC connector. NEC
228 NX8567SAS585-BC EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.578 nm. Frequency 192.30 THz. FC-UPC connector. NEC
229 NX8567SAS585-CC EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.578 nm. Frequency 192.30 THz. SC-UPC connector. NEC
230 NX8567SAS589-BC EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-UPC connector. NEC
231 NX8567SAS589-CC EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. NEC
232 OD-S589 SMT-InGaAs PIN-Amp Module NEC
233 OWS5812 25 Watt, input voltage range:20-60V, output voltage 12V (2.1A) DC/DC converter Power-One
234 PTVS58VP1UP 600 W Transient Voltage Suppressor Nexperia
235 PTVS58VP1UP 600 W Transient Voltage Suppressor NXP Semiconductors
236 PTVS58VP1UTP High-temperature 600 W Transient Voltage Suppressor Nexperia
237 PTVS58VP1UTP PTVSxP1UTP series NXP Semiconductors
238 PTVS58VS1UR 400 W Transient Voltage Suppressor Nexperia
239 PTVS58VS1UR 400 W Transient Voltage Suppressor NXP Semiconductors
240 PTVS58VS1UTR High-temperature 400 W Transient Voltage Suppressor Nexperia


Datasheets found :: 323
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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