No. |
Part Name |
Description |
Manufacturer |
211 |
NTTFS5811NL |
Power MOSFET, 40 V, 53 A, 6.4 mΩ |
ON Semiconductor |
212 |
NTTFS5820NL |
Power MOSFET, 60 V, 37 A, 11.5 mΩ |
ON Semiconductor |
213 |
NTTFS5826NL |
Data Sheet |
ON Semiconductor |
214 |
NVMFS5826NL |
Power MOSFET, 60 V, 26 A, 24 mΩ, Single N-Channel |
ON Semiconductor |
215 |
NVMFS5830NL |
Power MOSFET 40V 185A 2.3 mOhm Single N-Channel SO-8FL Logic Level |
ON Semiconductor |
216 |
NVMFS5832NL |
Power MOSFET 40 V, 4.2 mOhm, 120 A, Single N-Channel SO-8FL |
ON Semiconductor |
217 |
NVMFS5833N |
Power MOSFET |
ON Semiconductor |
218 |
NVMFS5885NL |
60 V, 15 mOhm, 39 A, Single N-Channel SO-8FL Power MOSFET |
ON Semiconductor |
219 |
NVTFS5811NL |
Power MOSFET, 40 V, 40 A, 6.7 mΩ, Single N-Channel |
ON Semiconductor |
220 |
NVTFS5820NL |
Power MOSFET, 60 V, 11.5 mΩ, Single N-Channel |
ON Semiconductor |
221 |
NVTFS5826NL |
Power MOSFET, 60 V, 20 A, 24 mΩ, Single N-Channel |
ON Semiconductor |
222 |
NX8563LAS581-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. SC-UPC. |
NEC |
223 |
NX8563LAS581-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. SC-APC. |
NEC |
224 |
NX8563LAS589-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC. |
NEC |
225 |
NX8563LAS589-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-APC. |
NEC |
226 |
NX8567SAS581-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.173 nm. Frequency 192.40 THz. FC-UPC connector. |
NEC |
227 |
NX8567SAS581-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.173 nm. Frequency 192.40 THz. SC-UPC connector. |
NEC |
228 |
NX8567SAS585-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.578 nm. Frequency 192.30 THz. FC-UPC connector. |
NEC |
229 |
NX8567SAS585-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.578 nm. Frequency 192.30 THz. SC-UPC connector. |
NEC |
230 |
NX8567SAS589-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-UPC connector. |
NEC |
231 |
NX8567SAS589-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |
NEC |
232 |
OD-S589 |
SMT-InGaAs PIN-Amp Module |
NEC |
233 |
OWS5812 |
25 Watt, input voltage range:20-60V, output voltage 12V (2.1A) DC/DC converter |
Power-One |
234 |
PTVS58VP1UP |
600 W Transient Voltage Suppressor |
Nexperia |
235 |
PTVS58VP1UP |
600 W Transient Voltage Suppressor |
NXP Semiconductors |
236 |
PTVS58VP1UTP |
High-temperature 600 W Transient Voltage Suppressor |
Nexperia |
237 |
PTVS58VP1UTP |
PTVSxP1UTP series |
NXP Semiconductors |
238 |
PTVS58VS1UR |
400 W Transient Voltage Suppressor |
Nexperia |
239 |
PTVS58VS1UR |
400 W Transient Voltage Suppressor |
NXP Semiconductors |
240 |
PTVS58VS1UTR |
High-temperature 400 W Transient Voltage Suppressor |
Nexperia |
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