| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SB1103 |
Silicon PNP Darlington Transistor |
Hitachi Semiconductor |
| 212 |
2SB1103 |
Transistors>Switching/Bipolar |
Renesas |
| 213 |
2SB1103 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
| 214 |
2SB1105 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
| 215 |
2SB1106 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
| 216 |
2SB1108 |
Medium Speed Switching Complementary Pair with 2SD1608 |
Panasonic |
| 217 |
2SB1109 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 218 |
2SB1110 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 219 |
2SB1114 |
Silicon transistor |
NEC |
| 220 |
2SB1114-T1 |
Silicon transistor |
NEC |
| 221 |
2SB1114-T2 |
Silicon transistor |
NEC |
| 222 |
2SB1115 |
60 V, 2 A, 2 W silicon transistor |
EIC discrete Semiconductors |
| 223 |
2SB1115 |
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 224 |
2SB1115-T1 |
Silicon transistor |
NEC |
| 225 |
2SB1115-T2 |
Silicon transistor |
NEC |
| 226 |
2SB1115A |
80 V, 2 A, 2 W silicon transistor |
EIC discrete Semiconductors |
| 227 |
2SB1115A |
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 228 |
2SB1115A-T1 |
Silicon transistor |
NEC |
| 229 |
2SB1115A-T2 |
Silicon transistor |
NEC |
| 230 |
2SB1116 |
Silicon transistor |
NEC |
| 231 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 232 |
2SB1116(C)-T |
Silicon transistor |
NEC |
| 233 |
2SB1116-T |
Silicon transistor |
NEC |
| 234 |
2SB1116-T/JD |
Silicon transistor |
NEC |
| 235 |
2SB1116-T/JM |
Silicon transistor |
NEC |
| 236 |
2SB1116/JD |
Silicon transistor |
NEC |
| 237 |
2SB1116/JM |
Silicon transistor |
NEC |
| 238 |
2SB1116A |
Silicon transistor |
NEC |
| 239 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 240 |
2SB1116A-T |
Silicon transistor |
NEC |
| | | |
