No. |
Part Name |
Description |
Manufacturer |
211 |
2N4400 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
212 |
2N4401 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
213 |
2N4401-D |
General Purpose Transitors NPN Silicon |
ON Semiconductor |
214 |
2N4401RLRAG |
General Purpose Transistors |
ON Semiconductor |
215 |
2N4401RLRPG |
General Purpose Transistors |
ON Semiconductor |
216 |
2N4401ZL1 |
General Purpose Transistors |
ON Semiconductor |
217 |
2N4402 |
General Purpose Transistors(PNP Silicon) |
ON Semiconductor |
218 |
2N4402 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
219 |
2N4403 |
General Purpose Transistors, PNP Silicon |
ON Semiconductor |
220 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
221 |
2N4403-D |
General Purpose Transitors PNP Silicon |
ON Semiconductor |
222 |
2N4403G |
General Purpose Transistors |
ON Semiconductor |
223 |
2N4403RL |
General Purpose Transistors, PNP Silicon |
ON Semiconductor |
224 |
2N4403RLRA |
General Purpose Transistors, PNP Silicon |
ON Semiconductor |
225 |
2N4403RLRAG |
General Purpose Transistors |
ON Semiconductor |
226 |
2N4403RLRE |
General Purpose Transistors PNP |
ON Semiconductor |
227 |
2N4403RLRM |
General Purpose Transistors, PNP Silicon |
ON Semiconductor |
228 |
2N4403RLRP |
General Purpose Transistors, PNP Silicon |
ON Semiconductor |
229 |
2N4403RLRPG |
General Purpose Transistors |
ON Semiconductor |
230 |
2N4403ZL1 |
General Purpose Transistors |
ON Semiconductor |
231 |
2N5087 |
PNP general purpose transistor |
Philips |
232 |
2N5088 |
NPN general purpose transistor |
Philips |
233 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
234 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
235 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
236 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
237 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
238 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
239 |
2N5294 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
240 |
2N5296 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
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