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Datasheets for SILICON GE

Datasheets found :: 249
Page: | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
211 NTE156A Silicon General Purpose Rectifier NTE Electronics
212 ON5088 NPN wideband silicon germanium RF transistor NXP Semiconductors
213 PN2906 PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES Micro Electronics
214 PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES Micro Electronics
215 SCP-1016 800 - 1000 MHz high linearity silicon germanium polar modulator Stanford Microdevices
216 SCP-2016 1800 - 2200 MHz high linearity silicon germanium polar modulator Stanford Microdevices
217 SGA-0163 DC-4500 MHz, 2.1V silicon germanium cascadeable gain block Stanford Microdevices
218 SGA-0363 DC-5000 MHz, 2.5V silicon germanium cascadeable gain block Stanford Microdevices
219 SGA-1163 DC-6000 MHz, 4.6V silicon germanium cascadeable gain block Stanford Microdevices
220 SGA-1263 DC-4000 MHz, 2.8V silicon germanium HBT cascadeable gain block Stanford Microdevices
221 SGA-2363 DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. Stanford Microdevices
222 SGA-2386 DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. High gain: 17.2 dB typ. at 850 MHz. Stanford Microdevices
223 SGA-3563 DC-5000 MHz, 3.2V, silicon germanium cascadeable gain block Stanford Microdevices
224 SGA-3586 DC-5000 MHz, 3.5V, silicon germanium cascadeable gain block Stanford Microdevices
225 SGA-4563 DC-2500 MHz. 3.5V silicon germanium cascdeable gain block. Stanford Microdevices
226 SGA-4586 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +29 dBm typ at 850 MHz Stanford Microdevices
227 SGA-5263 DC-4500 MHz, silicon germanium cascadeable gain block. High output intercept: 29 dBm typ at 1950 MHz Stanford Microdevices
228 SGA-5286 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.0 dBm typ at 850 MHz Stanford Microdevices
229 SGA-5289 DC-5000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ at 850 MHz Stanford Microdevices
230 SGA-5386 DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31 dBm typ at 850 MHz Stanford Microdevices
231 SGA-5389 DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.5 dBm typ. at 850 MHz Stanford Microdevices
232 SGA-5486 DC-2400 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz Stanford Microdevices
233 SGA-5489 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +30.8 dBm typ. at 850 MHz Stanford Microdevices
234 SGA-5586 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz Stanford Microdevices
235 SGA-5589 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +33 dBm typ. at 850 MHz Stanford Microdevices
236 SGA-6586 DC-2500 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +34.0 dBm typ. at 850 MHz Stanford Microdevices
237 SGA-6589 DC-4000 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +32.5 dBm typ. at 850 MHz Stanford Microdevices
238 SGA-7489 DC-3000 MHz 5V silicon germanium HBT cascdeable gain block. High output intercept; +36 dBm typ. at 850 MHz. Stanford Microdevices
239 SGA-9289 Silicon Germanium HBT Amplifier Stanford Microdevices
240 SGL-0163 800-1000 MHz low noise amplifier 50 Ohm, silicon germanium Stanford Microdevices


Datasheets found :: 249
Page: | 4 | 5 | 6 | 7 | 8 | 9 |



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