No. |
Part Name |
Description |
Manufacturer |
211 |
NTE156A |
Silicon General Purpose Rectifier |
NTE Electronics |
212 |
ON5088 |
NPN wideband silicon germanium RF transistor |
NXP Semiconductors |
213 |
PN2906 |
PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
214 |
PN2906A |
PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
215 |
SCP-1016 |
800 - 1000 MHz high linearity silicon germanium polar modulator |
Stanford Microdevices |
216 |
SCP-2016 |
1800 - 2200 MHz high linearity silicon germanium polar modulator |
Stanford Microdevices |
217 |
SGA-0163 |
DC-4500 MHz, 2.1V silicon germanium cascadeable gain block |
Stanford Microdevices |
218 |
SGA-0363 |
DC-5000 MHz, 2.5V silicon germanium cascadeable gain block |
Stanford Microdevices |
219 |
SGA-1163 |
DC-6000 MHz, 4.6V silicon germanium cascadeable gain block |
Stanford Microdevices |
220 |
SGA-1263 |
DC-4000 MHz, 2.8V silicon germanium HBT cascadeable gain block |
Stanford Microdevices |
221 |
SGA-2363 |
DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. |
Stanford Microdevices |
222 |
SGA-2386 |
DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. High gain: 17.2 dB typ. at 850 MHz. |
Stanford Microdevices |
223 |
SGA-3563 |
DC-5000 MHz, 3.2V, silicon germanium cascadeable gain block |
Stanford Microdevices |
224 |
SGA-3586 |
DC-5000 MHz, 3.5V, silicon germanium cascadeable gain block |
Stanford Microdevices |
225 |
SGA-4563 |
DC-2500 MHz. 3.5V silicon germanium cascdeable gain block. |
Stanford Microdevices |
226 |
SGA-4586 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +29 dBm typ at 850 MHz |
Stanford Microdevices |
227 |
SGA-5263 |
DC-4500 MHz, silicon germanium cascadeable gain block. High output intercept: 29 dBm typ at 1950 MHz |
Stanford Microdevices |
228 |
SGA-5286 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.0 dBm typ at 850 MHz |
Stanford Microdevices |
229 |
SGA-5289 |
DC-5000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ at 850 MHz |
Stanford Microdevices |
230 |
SGA-5386 |
DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31 dBm typ at 850 MHz |
Stanford Microdevices |
231 |
SGA-5389 |
DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.5 dBm typ. at 850 MHz |
Stanford Microdevices |
232 |
SGA-5486 |
DC-2400 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz |
Stanford Microdevices |
233 |
SGA-5489 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +30.8 dBm typ. at 850 MHz |
Stanford Microdevices |
234 |
SGA-5586 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz |
Stanford Microdevices |
235 |
SGA-5589 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +33 dBm typ. at 850 MHz |
Stanford Microdevices |
236 |
SGA-6586 |
DC-2500 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +34.0 dBm typ. at 850 MHz |
Stanford Microdevices |
237 |
SGA-6589 |
DC-4000 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +32.5 dBm typ. at 850 MHz |
Stanford Microdevices |
238 |
SGA-7489 |
DC-3000 MHz 5V silicon germanium HBT cascdeable gain block. High output intercept; +36 dBm typ. at 850 MHz. |
Stanford Microdevices |
239 |
SGA-9289 |
Silicon Germanium HBT Amplifier |
Stanford Microdevices |
240 |
SGL-0163 |
800-1000 MHz low noise amplifier 50 Ohm, silicon germanium |
Stanford Microdevices |
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