No. |
Part Name |
Description |
Manufacturer |
211 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
212 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
213 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
214 |
2N5306 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
215 |
2N5308 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
216 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
217 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
218 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
219 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
220 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
221 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
222 |
2N5457 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
223 |
2N5458 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
224 |
2N5459 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
225 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
226 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
227 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
228 |
2N5591 |
NPN silicon RF power transistor designed for VHF and 13.6V |
Motorola |
229 |
2N5794 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
230 |
2N5796 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
231 |
2N6034 |
Leaded Power Transistor Darlington |
Central Semiconductor |
232 |
2N6035 |
Leaded Power Transistor Darlington |
Central Semiconductor |
233 |
2N6036 |
Leaded Power Transistor Darlington |
Central Semiconductor |
234 |
2N6037 |
Leaded Power Transistor Darlington |
Central Semiconductor |
235 |
2N6038 |
Leaded Power Transistor Darlington |
Central Semiconductor |
236 |
2N6039 |
Leaded Power Transistor Darlington |
Central Semiconductor |
237 |
2N6040 |
Leaded Power Transistor Darlington |
Central Semiconductor |
238 |
2N6041 |
Leaded Power Transistor Darlington |
Central Semiconductor |
239 |
2N6042 |
Leaded Power Transistor Darlington |
Central Semiconductor |
240 |
2N6043 |
Leaded Power Transistor Darlington |
Central Semiconductor |
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